Photoluminescence properties of Er doped into C-rich SiC nanoparticle films

  • Shiyong Huang*
  • , S. Xu
  • , Jidong Long
  • , Z. Sun
  • , X. Z. Wang
  • , Y. W. Chen
  • , T. Chen
  • , C. Ni
  • , Z. J. Zhang
  • , L. L. Wang
  • , X. D. Li
  • , P. S. Guo
  • , W. X. Que
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Polycrystalline silicon carbide (P-SiC) films containing SiC nanoparticles and Er were prepared by r.f. reactive magnetron co-sputtering technique with SiC and Er targets on low-temperature silicon (111) and silicon dioxide substrates with the mixed gas of pure argon, methane, and hydrogen. Surface morphology and photoluminescence (PL) properties of them were measured by field-emission scanning electron microscope and Raman spectroscopy. The peak position, intensity, and the full width at half maximum (FWHM) of PL spectra were relevant with Er doping levels and deposition conditions.

Original languageEnglish
Pages (from-to)123-126
Number of pages4
JournalSurface Review and Letters
Volume13
Issue number1
DOIs
StatePublished - Feb 2006

Keywords

  • Co-sputtering
  • Er-doped
  • Nanoparticle
  • Photoluminescence

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