Photoluminescence of Sb-doped Hg1-xCdxTe

Yong Chang; Jun Hao Chu; Wen Guo Tang; Wen Zhong Shen; Ding Yuan Tang

Photoluminescence of Sb-doped Hg_1-xCd_xTe

Yong Chang, Jun Hao Chu, Wen Guo Tang, Wen Zhong Shen, Ding Yuan Tang

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The infrared photoluminescence spectroscopy was performed for Sb-doped Hg_1-xCd_xTe(x≈ 0.38)from 3.9K to 115K. The band to band transition, localized exciton and donor acceptor pair (D⁰A⁰)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg_1-xCd_xTe(x≈0.38).

Original language	English
Pages (from-to)	963
Number of pages	1
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	46
Issue number	5
State	Published - May 1997
Externally published	Yes

Cite this

@article{78c690f7153146aa8569d880cb20b25f,

title = "Photoluminescence of Sb-doped Hg1-xCdxTe",

abstract = "The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈ 0.38)from 3.9K to 115K. The band to band transition, localized exciton and donor acceptor pair (D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38).",

author = "Yong Chang and Chu, \{Jun Hao\} and Tang, \{Wen Guo\} and Shen, \{Wen Zhong\} and Tang, \{Ding Yuan\}",

year = "1997",

month = may,

language = "英语",

volume = "46",

pages = "963",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "5",

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TY - JOUR

T1 - Photoluminescence of Sb-doped Hg1-xCdxTe

AU - Chang, Yong

AU - Chu, Jun Hao

AU - Tang, Wen Guo

AU - Shen, Wen Zhong

AU - Tang, Ding Yuan

PY - 1997/5

Y1 - 1997/5

N2 - The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈ 0.38)from 3.9K to 115K. The band to band transition, localized exciton and donor acceptor pair (D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38).

AB - The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈ 0.38)from 3.9K to 115K. The band to band transition, localized exciton and donor acceptor pair (D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38).

UR - https://www.scopus.com/pages/publications/0347799888

M3 - 文章

AN - SCOPUS:0347799888

SN - 1000-3290

VL - 46

SP - 963

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 5

ER -

Photoluminescence of Sb-doped Hg_1-xCd_xTe

Abstract

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