Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

Xin Cao; Yiping Zeng; Meiying Kong; Liang Pan; Baoqiang Wang; Zhanping Zhu; Xiaoguang Wang; Yong Chang; Junhao Chu

doi:10.1016/S0022-0248(01)01529-9

Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

Xin Cao, Yiping Zeng, Meiying Kong, Liang Pan, Baoqiang Wang, Zhanping Zhu, Xiaoguang Wang, Yong Chang, Junhao Chu

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The photoluminescence spectra of the single δ-doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed.

Original language	English
Pages (from-to)	520-524
Number of pages	5
Journal	Journal of Crystal Growth
Volume	231
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(01)01529-9
State	Published - Nov 2001
Externally published	Yes

Keywords

A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
B3. High electron mobility transistors

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10.1016/S0022-0248(01)01529-9

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title = "Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer",

abstract = "The photoluminescence spectra of the single δ-doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed.",

keywords = "A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B3. High electron mobility transistors",

author = "Xin Cao and Yiping Zeng and Meiying Kong and Liang Pan and Baoqiang Wang and Zhanping Zhu and Xiaoguang Wang and Yong Chang and Junhao Chu",

year = "2001",

month = nov,

doi = "10.1016/S0022-0248(01)01529-9",

language = "英语",

volume = "231",

pages = "520--524",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

AU - Cao, Xin

AU - Zeng, Yiping

AU - Kong, Meiying

AU - Pan, Liang

AU - Wang, Baoqiang

AU - Zhu, Zhanping

AU - Wang, Xiaoguang

AU - Chang, Yong

AU - Chu, Junhao

PY - 2001/11

Y1 - 2001/11

N2 - The photoluminescence spectra of the single δ-doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed.

AB - The photoluminescence spectra of the single δ-doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed.

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting III-V materials

KW - B3. High electron mobility transistors

UR - https://www.scopus.com/pages/publications/0035502169

U2 - 10.1016/S0022-0248(01)01529-9

DO - 10.1016/S0022-0248(01)01529-9

M3 - 文章

AN - SCOPUS:0035502169

SN - 0022-0248

VL - 231

SP - 520

EP - 524

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

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Keywords

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