Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe

Y. Chang; J. H. Chu; W. G. Tang; W. Z. Shen; D. Y. Tang

doi:10.1016/S1350-4495(96)00021-7

Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe

Y. Chang^*
, J. H. Chu
, W. G. Tang
, W. Z. Shen
, D. Y. Tang

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Temperature-dependent (4.2-115 K) and excitation-intensity-dependent photoluminescence measurements have been performed on Sb doped HgCdTe samples with the emphasis on the impurity behavior of Sb doped in HgCdTe. In addition to the observation of the localized exciton, D°A°, band to band and bound to free transition related luminescence structures, the Sb-doping-related acceptor level of about 30 meV above the bottom of the valence band at 4.2 K has been obtained.

Original language	English
Pages (from-to)	747-751
Number of pages	5
Journal	Infrared Physics and Technology
Volume	37
Issue number	7
DOIs	https://doi.org/10.1016/S1350-4495(96)00021-7
State	Published - Dec 1996
Externally published	Yes

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title = "Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe",

abstract = "Temperature-dependent (4.2-115 K) and excitation-intensity-dependent photoluminescence measurements have been performed on Sb doped HgCdTe samples with the emphasis on the impurity behavior of Sb doped in HgCdTe. In addition to the observation of the localized exciton, D°A°, band to band and bound to free transition related luminescence structures, the Sb-doping-related acceptor level of about 30 meV above the bottom of the valence band at 4.2 K has been obtained.",

author = "Y. Chang and Chu, \{J. H.\} and Tang, \{W. G.\} and Shen, \{W. Z.\} and Tang, \{D. Y.\}",

year = "1996",

month = dec,

doi = "10.1016/S1350-4495(96)00021-7",

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pages = "747--751",

journal = "Infrared Physics and Technology",

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T1 - Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe

AU - Chang, Y.

AU - Chu, J. H.

AU - Tang, W. G.

AU - Shen, W. Z.

AU - Tang, D. Y.

PY - 1996/12

Y1 - 1996/12

N2 - Temperature-dependent (4.2-115 K) and excitation-intensity-dependent photoluminescence measurements have been performed on Sb doped HgCdTe samples with the emphasis on the impurity behavior of Sb doped in HgCdTe. In addition to the observation of the localized exciton, D°A°, band to band and bound to free transition related luminescence structures, the Sb-doping-related acceptor level of about 30 meV above the bottom of the valence band at 4.2 K has been obtained.

AB - Temperature-dependent (4.2-115 K) and excitation-intensity-dependent photoluminescence measurements have been performed on Sb doped HgCdTe samples with the emphasis on the impurity behavior of Sb doped in HgCdTe. In addition to the observation of the localized exciton, D°A°, band to band and bound to free transition related luminescence structures, the Sb-doping-related acceptor level of about 30 meV above the bottom of the valence band at 4.2 K has been obtained.

UR - https://www.scopus.com/pages/publications/0030315285

U2 - 10.1016/S1350-4495(96)00021-7

DO - 10.1016/S1350-4495(96)00021-7

M3 - 文章

AN - SCOPUS:0030315285

SN - 1350-4495

VL - 37

SP - 747

EP - 751

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

IS - 7

ER -

Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe

Abstract

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