Photoluminescence investigation of doped asymmetric coupled quantum wells

Huibing Mao; Jiaming Zhang; Wei Lu; Shuechu Shen

doi:10.1143/JJAP.34.5637

Photoluminescence investigation of doped asymmetric coupled quantum wells

Huibing Mao
, Jiaming Zhang
, Wei Lu
, Shuechu Shen

Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different Al_O.2Ga_O.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm Al_O.2Ga_O.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.

Original language	English
Pages (from-to)	5637-5639
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	34
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.34.5637
State	Published - Oct 1995
Externally published	Yes

Keywords

Asymmetric coupled quantum well
Effective mass filtering
Intersubband relaxation
Photoluminescence
Rate equation

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10.1143/JJAP.34.5637

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title = "Photoluminescence investigation of doped asymmetric coupled quantum wells",

abstract = "We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different AlO.2GaO.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm AlO.2GaO.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.",

keywords = "Asymmetric coupled quantum well, Effective mass filtering, Intersubband relaxation, Photoluminescence, Rate equation",

author = "Huibing Mao and Jiaming Zhang and Wei Lu and Shuechu Shen",

year = "1995",

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doi = "10.1143/JJAP.34.5637",

language = "英语",

volume = "34",

pages = "5637--5639",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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TY - JOUR

T1 - Photoluminescence investigation of doped asymmetric coupled quantum wells

AU - Mao, Huibing

AU - Zhang, Jiaming

AU - Lu, Wei

AU - Shen, Shuechu

PY - 1995/10

Y1 - 1995/10

N2 - We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different AlO.2GaO.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm AlO.2GaO.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.

AB - We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different AlO.2GaO.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm AlO.2GaO.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.

KW - Asymmetric coupled quantum well

KW - Effective mass filtering

KW - Intersubband relaxation

KW - Photoluminescence

KW - Rate equation

UR - https://www.scopus.com/pages/publications/0029391026

U2 - 10.1143/JJAP.34.5637

DO - 10.1143/JJAP.34.5637

M3 - 文章

AN - SCOPUS:0029391026

SN - 0021-4922

VL - 34

SP - 5637

EP - 5639

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Photoluminescence investigation of doped asymmetric coupled quantum wells

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Keywords

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