Photoluminescence from Eu ions implanted SiO2 thin films

F. Liu; M. Zhu; L. Wang; Y. Hou

doi:10.1016/S0925-8388(00)00870-7

Photoluminescence from Eu ions implanted SiO₂ thin films

F. Liu^*
, M. Zhu
, L. Wang
, Y. Hou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Photoluminescence (PL) and PL excitation spectra from Eu^3- implanted thermal growth SiO₂ thin films have been investigated at room temperature. After annealing at 1000 °C in N₂, the red light emission from Eu ions doped SiO₂ film, corresponding to the ⁵D₀-⁷F_J transition of Eu³⁺, was observed. With increasing the annealing temperature (T_a) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu³⁺ to Eu²⁺ is discussed.

Original language	English
Pages (from-to)	93-96
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	311
Issue number	1
DOIs	https://doi.org/10.1016/S0925-8388(00)00870-7
State	Published - 12 Oct 2000
Externally published	Yes

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10.1016/S0925-8388(00)00870-7

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title = "Photoluminescence from Eu ions implanted SiO2 thin films",

abstract = "Photoluminescence (PL) and PL excitation spectra from Eu3- implanted thermal growth SiO2 thin films have been investigated at room temperature. After annealing at 1000 °C in N2, the red light emission from Eu ions doped SiO2 film, corresponding to the 5D0-7FJ transition of Eu3+, was observed. With increasing the annealing temperature (Ta) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu3+ to Eu2+ is discussed.",

author = "F. Liu and M. Zhu and L. Wang and Y. Hou",

year = "2000",

month = oct,

day = "12",

doi = "10.1016/S0925-8388(00)00870-7",

language = "英语",

volume = "311",

pages = "93--96",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - Photoluminescence from Eu ions implanted SiO2 thin films

AU - Liu, F.

AU - Zhu, M.

AU - Wang, L.

AU - Hou, Y.

PY - 2000/10/12

Y1 - 2000/10/12

N2 - Photoluminescence (PL) and PL excitation spectra from Eu3- implanted thermal growth SiO2 thin films have been investigated at room temperature. After annealing at 1000 °C in N2, the red light emission from Eu ions doped SiO2 film, corresponding to the 5D0-7FJ transition of Eu3+, was observed. With increasing the annealing temperature (Ta) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu3+ to Eu2+ is discussed.

AB - Photoluminescence (PL) and PL excitation spectra from Eu3- implanted thermal growth SiO2 thin films have been investigated at room temperature. After annealing at 1000 °C in N2, the red light emission from Eu ions doped SiO2 film, corresponding to the 5D0-7FJ transition of Eu3+, was observed. With increasing the annealing temperature (Ta) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu3+ to Eu2+ is discussed.

UR - https://www.scopus.com/pages/publications/0034300762

U2 - 10.1016/S0925-8388(00)00870-7

DO - 10.1016/S0925-8388(00)00870-7

M3 - 文章

AN - SCOPUS:0034300762

SN - 0925-8388

VL - 311

SP - 93

EP - 96

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1

ER -

Photoluminescence from Eu ions implanted SiO₂ thin films

Abstract

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