Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate

Xuqiang Luo; Jiqing Wang; Huibing Mao; Zdenek Remes; Karal Kral

doi:10.1007/s00339-013-7684-5

Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate

Xuqiang Luo
, Jiqing Wang
, Huibing Mao^*
, Zdenek Remes
, Karal Kral

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the photoluminescence eigenmodes of the ZnO semiconductor microcavity on a Ag/Si substrate at room temperature. The experiment results show that the photoluminescence modes do not depend on the excitation intensity. The eigenmode in the microcavity is considered to be the perpendicular Fabry-Perot modes, where the effect of the strong coupling between plasmon and exciton is observed with the reducing of the effective refractive index from original 2.0 to 1.67 at the wavelength of 585 nm. Meanwhile, there is also a coupling between the plasmon and the exciton-polariton in the band-edge region, and the effective refractive index 1.92 is in good agreement between the experimental and the theoretical results.

Original language	English
Pages (from-to)	821-825
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	112
Issue number	4
DOIs	https://doi.org/10.1007/s00339-013-7684-5
State	Published - Sep 2013

Access to Document

10.1007/s00339-013-7684-5

Cite this

@article{3a5c4fc26b004385af8e61db213e97bd,

title = "Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate",

abstract = "We report the photoluminescence eigenmodes of the ZnO semiconductor microcavity on a Ag/Si substrate at room temperature. The experiment results show that the photoluminescence modes do not depend on the excitation intensity. The eigenmode in the microcavity is considered to be the perpendicular Fabry-Perot modes, where the effect of the strong coupling between plasmon and exciton is observed with the reducing of the effective refractive index from original 2.0 to 1.67 at the wavelength of 585 nm. Meanwhile, there is also a coupling between the plasmon and the exciton-polariton in the band-edge region, and the effective refractive index 1.92 is in good agreement between the experimental and the theoretical results.",

author = "Xuqiang Luo and Jiqing Wang and Huibing Mao and Zdenek Remes and Karal Kral",

year = "2013",

month = sep,

doi = "10.1007/s00339-013-7684-5",

language = "英语",

volume = "112",

pages = "821--825",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "4",

}

TY - JOUR

T1 - Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate

AU - Luo, Xuqiang

AU - Wang, Jiqing

AU - Mao, Huibing

AU - Remes, Zdenek

AU - Kral, Karal

PY - 2013/9

Y1 - 2013/9

N2 - We report the photoluminescence eigenmodes of the ZnO semiconductor microcavity on a Ag/Si substrate at room temperature. The experiment results show that the photoluminescence modes do not depend on the excitation intensity. The eigenmode in the microcavity is considered to be the perpendicular Fabry-Perot modes, where the effect of the strong coupling between plasmon and exciton is observed with the reducing of the effective refractive index from original 2.0 to 1.67 at the wavelength of 585 nm. Meanwhile, there is also a coupling between the plasmon and the exciton-polariton in the band-edge region, and the effective refractive index 1.92 is in good agreement between the experimental and the theoretical results.

AB - We report the photoluminescence eigenmodes of the ZnO semiconductor microcavity on a Ag/Si substrate at room temperature. The experiment results show that the photoluminescence modes do not depend on the excitation intensity. The eigenmode in the microcavity is considered to be the perpendicular Fabry-Perot modes, where the effect of the strong coupling between plasmon and exciton is observed with the reducing of the effective refractive index from original 2.0 to 1.67 at the wavelength of 585 nm. Meanwhile, there is also a coupling between the plasmon and the exciton-polariton in the band-edge region, and the effective refractive index 1.92 is in good agreement between the experimental and the theoretical results.

UR - https://www.scopus.com/pages/publications/84881554388

U2 - 10.1007/s00339-013-7684-5

DO - 10.1007/s00339-013-7684-5

M3 - 文章

AN - SCOPUS:84881554388

SN - 0947-8396

VL - 112

SP - 821

EP - 825

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Photoluminescence eigenmodes in the ZnO semiconductor microcavity on the Ag/Si substrate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this