Photoluminescence and electrical characteristics of arsenic-doped HgCdTe

Xiao Hua Zhang; Lu Chen; Tie Lin; Li He; Shao Ling Guo; Jun Hao Chu

doi:10.3724/SP.J.1010.2012.00407

Photoluminescence and electrical characteristics of arsenic-doped HgCdTe

Xiao Hua Zhang^*
, Lu Chen
, Tie Lin
, Li He
, Shao Ling Guo
, Jun Hao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that As_Te, V_Hg, Te_Hg-V_Hg and Te_Hg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More Te_Hg-V_Hg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of Te_Hg, which lowers the mobility of the material.

Original language	English
Pages (from-to)	407-410
Number of pages	4
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	31
Issue number	5
DOIs	https://doi.org/10.3724/SP.J.1010.2012.00407
State	Published - Oct 2012

Keywords

Carrier concentration
HgCdTe
Photoluminescence

Access to Document

10.3724/SP.J.1010.2012.00407

Cite this

@article{d3d61f29a5a44a9aa2855b173038141b,

title = "Photoluminescence and electrical characteristics of arsenic-doped HgCdTe",

abstract = "Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that AsTe, VHg, TeHg-VHg and TeHg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More TeHg-VHg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of TeHg, which lowers the mobility of the material.",

keywords = "Carrier concentration, HgCdTe, Photoluminescence",

author = "Zhang, \{Xiao Hua\} and Lu Chen and Tie Lin and Li He and Guo, \{Shao Ling\} and Chu, \{Jun Hao\}",

year = "2012",

month = oct,

doi = "10.3724/SP.J.1010.2012.00407",

language = "英语",

volume = "31",

pages = "407--410",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "5",

}

TY - JOUR

T1 - Photoluminescence and electrical characteristics of arsenic-doped HgCdTe

AU - Zhang, Xiao Hua

AU - Chen, Lu

AU - Lin, Tie

AU - He, Li

AU - Guo, Shao Ling

AU - Chu, Jun Hao

PY - 2012/10

Y1 - 2012/10

N2 - Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that AsTe, VHg, TeHg-VHg and TeHg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More TeHg-VHg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of TeHg, which lowers the mobility of the material.

AB - Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that AsTe, VHg, TeHg-VHg and TeHg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More TeHg-VHg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of TeHg, which lowers the mobility of the material.

KW - Carrier concentration

KW - HgCdTe

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/84870280387

U2 - 10.3724/SP.J.1010.2012.00407

DO - 10.3724/SP.J.1010.2012.00407

M3 - 文章

AN - SCOPUS:84870280387

SN - 1001-9014

VL - 31

SP - 407

EP - 410

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

Photoluminescence and electrical characteristics of arsenic-doped HgCdTe

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this