Photoelectronic response characteristics of lattice mismatched Inas0.07Sb0.93 films based on GaAs substrate

Liang Huang; Pingping Chen; Shaowei Wang; Zhifeng Li

Photoelectronic response characteristics of lattice mismatched Inas_0.07Sb_0.93 films based on GaAs substrate

Liang Huang, Pingping Chen, Shaowei Wang, Zhifeng Li

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The new infrared material InAs_0.07Sb_0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs_0.07Sb_0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.

Original language	English
Pages (from-to)	958-962
Number of pages	5
Journal	Bandaoti Guangdian/Semiconductor Optoelectronics
Volume	35
Issue number	6
State	Published - 1 Dec 2014
Externally published	Yes

Keywords

InAsSb film
Infrared detector
Mid-infrared

Cite this

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title = "Photoelectronic response characteristics of lattice mismatched Inas0.07Sb0.93 films based on GaAs substrate",

abstract = "The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.",

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author = "Liang Huang and Pingping Chen and Shaowei Wang and Zhifeng Li",

year = "2014",

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T1 - Photoelectronic response characteristics of lattice mismatched Inas0.07Sb0.93 films based on GaAs substrate

AU - Huang, Liang

AU - Chen, Pingping

AU - Wang, Shaowei

AU - Li, Zhifeng

PY - 2014/12/1

Y1 - 2014/12/1

N2 - The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.

AB - The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.

KW - InAsSb film

KW - Infrared detector

KW - Mid-infrared

UR - https://www.scopus.com/pages/publications/84921835645

M3 - 文章

AN - SCOPUS:84921835645

SN - 1001-5868

VL - 35

SP - 958

EP - 962

JO - Bandaoti Guangdian/Semiconductor Optoelectronics

JF - Bandaoti Guangdian/Semiconductor Optoelectronics

IS - 6

ER -

Photoelectronic response characteristics of lattice mismatched Inas_0.07Sb_0.93 films based on GaAs substrate

Abstract

Keywords

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