Abstract
We report the observation of photocurrent spectrum involving both the fundamental interband, extrinsic defect transitions 3-FeSi2 and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of B-FeSi2. The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.
| Original language | English |
|---|---|
| Pages (from-to) | 34-37 |
| Number of pages | 4 |
| Journal | Chinese Physics Letters |
| Volume | 12 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1995 |
| Externally published | Yes |