Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Sannian Song; Dongning Yao; Zhitang Song; Lina Gao; Zhonghua Zhang; Le Li; Lanlan Shen; Liangcai Wu; Bo Liu; Yan Cheng; Songlin Feng

doi:10.1186/s11671-015-0815-5

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Sannian Song, Dongning Yao, Zhitang Song, Lina Gao, Zhonghua Zhang, Le Li, Lanlan Shen, Liangcai Wu, Bo Liu, Yan Cheng, Songlin Feng

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge₂Sb₂Te₅ (GST) and GeSb₈Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH₃)₂ N]₄, Sb [(CH₃)₂ N]₃, Te(C₄H₉)₂ as precursors and plasma-activated H₂ gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb₈Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb₈Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

Original language	English
Article number	89
Journal	Nanoscale Research Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1186/s11671-015-0815-5
State	Published - 2015
Externally published	Yes

Keywords

Atomic layer deposition
Electric properties
Microstructure
Phase-change memory

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10.1186/s11671-015-0815-5

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title = "Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon",

abstract = "Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.",

keywords = "Atomic layer deposition, Electric properties, Microstructure, Phase-change memory",

author = "Sannian Song and Dongning Yao and Zhitang Song and Lina Gao and Zhonghua Zhang and Le Li and Lanlan Shen and Liangcai Wu and Bo Liu and Yan Cheng and Songlin Feng",

note = "Publisher Copyright: {\textcopyright} 2015, Song et al.; licensee Springer.",

year = "2015",

doi = "10.1186/s11671-015-0815-5",

language = "英语",

volume = "10",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

AU - Song, Sannian

AU - Yao, Dongning

AU - Song, Zhitang

AU - Gao, Lina

AU - Zhang, Zhonghua

AU - Li, Le

AU - Shen, Lanlan

AU - Wu, Liangcai

AU - Liu, Bo

AU - Cheng, Yan

AU - Feng, Songlin

PY - 2015

Y1 - 2015

N2 - Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

AB - Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

KW - Atomic layer deposition

KW - Electric properties

KW - Microstructure

KW - Phase-change memory

UR - https://www.scopus.com/pages/publications/84924678296

U2 - 10.1186/s11671-015-0815-5

DO - 10.1186/s11671-015-0815-5

M3 - 文章

AN - SCOPUS:84924678296

SN - 1931-7573

VL - 10

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 89

ER -

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

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Keywords

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