Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

Yifeng Gu; Sannian Song; Zhitang Song; Suyuan Bai; Yan Cheng; Zhonghua Zhang; Bo Liu; Songlin Feng

doi:10.1063/1.4795595

Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory

Yifeng Gu^*
, Sannian Song
, Zhitang Song
, Suyuan Bai
, Yan Cheng
, Zhonghua Zhang
, Bo Liu
, Songlin Feng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Compared with Ge₂Sb₂Te₅, Ge _0.61Sb₂Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 10⁶ cycles. Ge_0.61Sb ₂Te material is a promising candidate for the trade-off between programming speed and data retention.

Original language	English
Article number	103110
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795595
State	Published - 11 Mar 2013
Externally published	Yes

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title = "Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory",

abstract = "Compared with Ge2Sb2Te5, Ge 0.61Sb2Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge0.61Sb 2Te material is a promising candidate for the trade-off between programming speed and data retention.",

author = "Yifeng Gu and Sannian Song and Zhitang Song and Suyuan Bai and Yan Cheng and Zhonghua Zhang and Bo Liu and Songlin Feng",

year = "2013",

month = mar,

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doi = "10.1063/1.4795595",

language = "英语",

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journal = "Applied Physics Letters",

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T1 - Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

AU - Gu, Yifeng

AU - Song, Sannian

AU - Song, Zhitang

AU - Bai, Suyuan

AU - Cheng, Yan

AU - Zhang, Zhonghua

AU - Liu, Bo

AU - Feng, Songlin

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Compared with Ge2Sb2Te5, Ge 0.61Sb2Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge0.61Sb 2Te material is a promising candidate for the trade-off between programming speed and data retention.

AB - Compared with Ge2Sb2Te5, Ge 0.61Sb2Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge0.61Sb 2Te material is a promising candidate for the trade-off between programming speed and data retention.

UR - https://www.scopus.com/pages/publications/84875142053

U2 - 10.1063/1.4795595

DO - 10.1063/1.4795595

M3 - 文章

AN - SCOPUS:84875142053

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103110

ER -

Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory

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