TY - JOUR
T1 - pFed-Litho
T2 - Lithography Modeling With a Personalized Federated Learning-Based Framework
AU - Zhang, Qing
AU - Zhang, Yuhang
AU - Chen, Rui
AU - Lu, Wei
AU - Huang, Huajie
AU - Li, Zhiqiang
AU - Li, Yongfu
N1 - Publisher Copyright:
© 1982-2012 IEEE.
PY - 2025
Y1 - 2025
N2 - Modeling lithography using machine learning is extremely data-intensive. Due to intellectual property privacy concerns and potential malicious attacks, design houses and foundries are unwilling to share their designs directly. To address the aforementioned concerns, we have proposed a personalized federated learning-based framework (pFed-Litho) to perform end-to-end lithography simulation. This framework incorporates a cross-level local training algorithm along with an integrated optimization method to generate personalized and local models, which overcome the generalization problem and slow convergence and oscillatory behavior in its loss function, respectively. The experimental results show that our pFed-Litho framework achieves up to 14.07% higher accuracy with reduced oscillatory behavior in the loss curve compared to the state-of-the-art works. Even with a dataset reduced by 100× , our framework maintains a stable accuracy of over 91%, representing a 50% increase compared to the U-Net model.
AB - Modeling lithography using machine learning is extremely data-intensive. Due to intellectual property privacy concerns and potential malicious attacks, design houses and foundries are unwilling to share their designs directly. To address the aforementioned concerns, we have proposed a personalized federated learning-based framework (pFed-Litho) to perform end-to-end lithography simulation. This framework incorporates a cross-level local training algorithm along with an integrated optimization method to generate personalized and local models, which overcome the generalization problem and slow convergence and oscillatory behavior in its loss function, respectively. The experimental results show that our pFed-Litho framework achieves up to 14.07% higher accuracy with reduced oscillatory behavior in the loss curve compared to the state-of-the-art works. Even with a dataset reduced by 100× , our framework maintains a stable accuracy of over 91%, representing a 50% increase compared to the U-Net model.
KW - Design for manufacturability
KW - lithography simulation
KW - neural network
KW - personalized federated learning
UR - https://www.scopus.com/pages/publications/85211999002
U2 - 10.1109/TCAD.2024.3513264
DO - 10.1109/TCAD.2024.3513264
M3 - 文章
AN - SCOPUS:85211999002
SN - 0278-0070
VL - 44
SP - 2264
EP - 2276
JO - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
JF - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IS - 6
ER -