@inproceedings{5ff79fef7a074850b5d3ed0ca788d31e,
title = "Performance improvement of phase change memory cell by using a tantalum pentoxide buffer layer",
abstract = "The performance of phase change memory (PCM) cell, based on Ti0.5Sb2Te3, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation and calculation for the reset process were conducted to analyze the thermal effect of the titanium dioxide heating layer. The improved performance of the PCM cell with dioxide clad layer can be attributed to the fact that the buffer layer not only acted as heating layer but also efficiently reduced the cell dissipated power.",
keywords = "Buffer layer, Phase change memory, Semiconductors, Tantalum pentoxide, Thin films, TiSbTe",
author = "Zhang, \{Zhong Hua\} and Song, \{San Nian\} and Song, \{Zhi Tang\} and Le Li and Shen, \{Lan Lan\} and Guo, \{Tian Qi\} and Yan Cheng and Lv, \{Shi Long\} and Wu, \{Liang Cai\} and Bo Liu and Feng, \{Song Lin\}",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; Chinese Materials Congress on Functional and Functionally Structured Materials, CMC 2015 ; Conference date: 10-07-2015 Through 14-07-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.848.425",
language = "英语",
isbn = "9783038357605",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "425--429",
editor = "Yafang Han and Ying Wu and Guangxian Li and Fusheng Pan and Xuefeng Liu and Runhua Fan",
booktitle = "Functional and Functionally Structured Materials",
address = "瑞士",
}