Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration

Zihan Sun; Xianglong Li; Yabin Sun; Ziyu Liu; Yanling Shi; Xiaojin Li

doi:10.1109/EDTM50988.2021.9420823

Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration

Zihan Sun, Xianglong Li, Yabin Sun, Ziyu Liu, Yanling Shi, Xiaojin Li

School of Communication and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A dual-gate negative capacitance reconfigurable field effect transistor (NC-RFET) is proposed in present work. Combining with 3D TCAD simulation with Landau-Khalatnikov equation, critical electrical parameters such as surface potential, gate capacitance, and sub-threshold swing are evaluated to characterize the negative capacitance through the post-processing method. The design criterion for NC-RFET is obtained by analyzing the impact of some critical physical parameters.

Original language	English
Title of host publication	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728181769
DOIs	https://doi.org/10.1109/EDTM50988.2021.9420823
State	Published - 8 Apr 2021
Event	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China Duration: 8 Apr 2021 → 11 Apr 2021

Publication series

Name	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/Territory	China
City	Chengdu
Period	8/04/21 → 11/04/21

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10.1109/EDTM50988.2021.9420823

Cite this

Sun, Z., Li, X., Sun, Y., Liu, Z., Shi, Y., & Li, X. (2021). Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 Article 9420823 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM50988.2021.9420823

Sun, Zihan ; Li, Xianglong ; Sun, Yabin et al. / Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

@inproceedings{c596dbde0021430a9f280d005720f856,

title = "Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration",

abstract = "A dual-gate negative capacitance reconfigurable field effect transistor (NC-RFET) is proposed in present work. Combining with 3D TCAD simulation with Landau-Khalatnikov equation, critical electrical parameters such as surface potential, gate capacitance, and sub-threshold swing are evaluated to characterize the negative capacitance through the post-processing method. The design criterion for NC-RFET is obtained by analyzing the impact of some critical physical parameters.",

author = "Zihan Sun and Xianglong Li and Yabin Sun and Ziyu Liu and Yanling Shi and Xiaojin Li",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",

year = "2021",

month = apr,

day = "8",

doi = "10.1109/EDTM50988.2021.9420823",

language = "英语",

series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",

address = "美国",

}

Sun, Z, Li, X, Sun, Y, Liu, Z, Shi, Y & Li, X 2021, Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration. in 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021., 9420823, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Institute of Electrical and Electronics Engineers Inc., 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Chengdu, China, 8/04/21. https://doi.org/10.1109/EDTM50988.2021.9420823

Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration. / Sun, Zihan; Li, Xianglong; Sun, Yabin et al.
2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9420823 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration

AU - Sun, Zihan

AU - Li, Xianglong

AU - Sun, Yabin

AU - Liu, Ziyu

AU - Shi, Yanling

AU - Li, Xiaojin

PY - 2021/4/8

Y1 - 2021/4/8

N2 - A dual-gate negative capacitance reconfigurable field effect transistor (NC-RFET) is proposed in present work. Combining with 3D TCAD simulation with Landau-Khalatnikov equation, critical electrical parameters such as surface potential, gate capacitance, and sub-threshold swing are evaluated to characterize the negative capacitance through the post-processing method. The design criterion for NC-RFET is obtained by analyzing the impact of some critical physical parameters.

AB - A dual-gate negative capacitance reconfigurable field effect transistor (NC-RFET) is proposed in present work. Combining with 3D TCAD simulation with Landau-Khalatnikov equation, critical electrical parameters such as surface potential, gate capacitance, and sub-threshold swing are evaluated to characterize the negative capacitance through the post-processing method. The design criterion for NC-RFET is obtained by analyzing the impact of some critical physical parameters.

UR - https://www.scopus.com/pages/publications/85106537504

U2 - 10.1109/EDTM50988.2021.9420823

DO - 10.1109/EDTM50988.2021.9420823

M3 - 会议稿件

AN - SCOPUS:85106537504

T3 - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

BT - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Y2 - 8 April 2021 through 11 April 2021

ER -

Sun Z, Li X, Sun Y, Liu Z, Shi Y, Li X. Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9420823. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). doi: 10.1109/EDTM50988.2021.9420823

Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration

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