TY - JOUR
T1 - Peptide-Engineered Interface to Improve the Efficiency of Pure Red Tin Halide Perovskite LEDs by Controlling Crystallization and Reducing Oxidation
AU - Wu, Zhixian
AU - Zheng, Xueyong
AU - Jiang, Chunli
AU - Xie, Junhan
AU - Liu, Weimin
AU - Li, Bo
AU - Lin, Hechun
AU - Peng, Hui
AU - Luo, Chunhua
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/2/25
Y1 - 2025/2/25
N2 - Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have garnered significant attention owing to their superior optoelectronic properties, affordable solution processing, and environmental friendliness. However, the properties of Sn-PeLEDs trail those of their lead (Pb) counterparts. The main obstacle is the easy oxidation of Sn2+ to Sn4+ as well as fast crystallization, leading to poor film quality with many defects. Herein, a convenient and effective interface engineering strategy is reported to fabricate (2-thiopheneethylamine)2SnI4 (TEA2SnI4) PeLEDs by introducing different peptides into the PEDOT:PSS hole-transport layer (HTL). Benefiting from the interaction between the peptide molecules and the Sn-perovskite nuclei, the crystallization dynamics are effectively adjusted, leading to an improved film morphology. At the same time, the multiple functional groups of peptides can suppress Sn2+ oxidation and passivate interface defects. Therefore, perovskite films with improved luminescence efficiency are obtained. The perovskite films are further used for the fabrication of pure red PeLEDs with enhanced performance. In particular, the optimized devices based on Leu-Gly-Gly (LGG) achieve a peak external quantum efficiency of 0.5% and a brightness of 136 cd m-2, which are about 2 and 3 times larger, respectively, than those of the reference device. This research offers a general strategy to improve the performance of Sn-PeLEDs via peptide interface engineering. (Figure presented).
AB - Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have garnered significant attention owing to their superior optoelectronic properties, affordable solution processing, and environmental friendliness. However, the properties of Sn-PeLEDs trail those of their lead (Pb) counterparts. The main obstacle is the easy oxidation of Sn2+ to Sn4+ as well as fast crystallization, leading to poor film quality with many defects. Herein, a convenient and effective interface engineering strategy is reported to fabricate (2-thiopheneethylamine)2SnI4 (TEA2SnI4) PeLEDs by introducing different peptides into the PEDOT:PSS hole-transport layer (HTL). Benefiting from the interaction between the peptide molecules and the Sn-perovskite nuclei, the crystallization dynamics are effectively adjusted, leading to an improved film morphology. At the same time, the multiple functional groups of peptides can suppress Sn2+ oxidation and passivate interface defects. Therefore, perovskite films with improved luminescence efficiency are obtained. The perovskite films are further used for the fabrication of pure red PeLEDs with enhanced performance. In particular, the optimized devices based on Leu-Gly-Gly (LGG) achieve a peak external quantum efficiency of 0.5% and a brightness of 136 cd m-2, which are about 2 and 3 times larger, respectively, than those of the reference device. This research offers a general strategy to improve the performance of Sn-PeLEDs via peptide interface engineering. (Figure presented).
KW - interface engineering
KW - light emitting diodes
KW - peptide
KW - red
KW - tin halide perovskite
UR - https://www.scopus.com/pages/publications/85217764667
U2 - 10.1021/acsaelm.4c01935
DO - 10.1021/acsaelm.4c01935
M3 - 文章
AN - SCOPUS:85217764667
SN - 2637-6113
VL - 7
SP - 1423
EP - 1431
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 4
ER -