PbZr0.5Ti0.5O3/La0.5Sr 0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

G. S. Wang; X. J. Meng; J. L. Sun; Z. Q. Lai; J. Yu; S. L. Guo; J. G. Cheng; J. Tang; J. H. Chu

doi:10.1063/1.1419234

PbZr_0.5Ti_0.5O₃/La_0.5Sr _0.5CoO₃ heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

G. S. Wang^*
, X. J. Meng
, J. L. Sun
, Z. Q. Lai
, J. Yu
, S. L. Guo
, J. G. Cheng
, J. Tang
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

PbZr_0.5Ti_0.5O₃/La_0.5Sr _0.5CoO₃ (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization P_r is about 22.8 μC/cm² and the coercive field E_c is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3 × 10⁹ fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application.

Original language	English
Pages (from-to)	3476-3478
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	21
DOIs	https://doi.org/10.1063/1.1419234
State	Published - 19 Nov 2001
Externally published	Yes

Access to Document

10.1063/1.1419234

Cite this

@article{0b349745e7e649829d1b86b63adc5cc2,

title = "PbZr0.5Ti0.5O3/La0.5Sr 0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization",

abstract = "PbZr0.5Ti0.5O3/La0.5Sr 0.5CoO3 (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization Pr is about 22.8 μC/cm2 and the coercive field Ec is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3 × 109 fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application.",

author = "Wang, \{G. S.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and Lai, \{Z. Q.\} and J. Yu and Guo, \{S. L.\} and Cheng, \{J. G.\} and J. Tang and Chu, \{J. H.\}",

year = "2001",

month = nov,

day = "19",

doi = "10.1063/1.1419234",

language = "英语",

volume = "79",

pages = "3476--3478",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - PbZr0.5Ti0.5O3/La0.5Sr 0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

AU - Wang, G. S.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Lai, Z. Q.

AU - Yu, J.

AU - Guo, S. L.

AU - Cheng, J. G.

AU - Tang, J.

AU - Chu, J. H.

PY - 2001/11/19

Y1 - 2001/11/19

N2 - PbZr0.5Ti0.5O3/La0.5Sr 0.5CoO3 (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization Pr is about 22.8 μC/cm2 and the coercive field Ec is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3 × 109 fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application.

AB - PbZr0.5Ti0.5O3/La0.5Sr 0.5CoO3 (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization Pr is about 22.8 μC/cm2 and the coercive field Ec is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3 × 109 fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application.

UR - https://www.scopus.com/pages/publications/0035914871

U2 - 10.1063/1.1419234

DO - 10.1063/1.1419234

M3 - 文章

AN - SCOPUS:0035914871

SN - 0003-6951

VL - 79

SP - 3476

EP - 3478

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

PbZr_0.5Ti_0.5O₃/La_0.5Sr _0.5CoO₃ heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

Abstract

Access to Document

Other files and links

Fingerprint

Cite this