PbZr0.5Ti0.5O3 thin films prepared on La0.5Sr0.5CoO3/LaNiO3 heterostructures for integrated ferroelectric devices

G. S. Wang; Z. Q. Lai; X. J. Meng; J. L. Sun; J. Yu; S. L. Guo; J. H. Chu

doi:10.1109/ICSICT.2001.981604

PbZr_0.5Ti_0.5O₃ thin films prepared on La_0.5Sr_0.5CoO₃/LaNiO₃ heterostructures for integrated ferroelectric devices

G. S. Wang, Z. Q. Lai, X. J. Meng, J. L. Sun, J. Yu, S. L. Guo, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

La_0.5Sr_0.5CoO₃ /LaNiO₃ (LSCO/LNO) heterostructures have been grown on Si[100] substrate by chemical solution deposition (MSD) technique. PbZr_0.5Ti_0.5O₃ (PZT) thin films are deposited onto LSCO/LNO heterostructure by a modified sol-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 μΩ·cm) of LSCO/LNO heterostructures was obtained by annealing at 750°C. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films are polycrystalline and entirely perovskite phase. The Pt/PZ|T/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 10⁹ switching cycles. The remnant polarization P_r and the coercive field E_c are about 28 μC/cm² and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Editors	Hiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	718-721
Number of pages	4
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.981604
State	Published - 2001
Externally published	Yes
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 22 Oct 2001 → 25 Oct 2001

Publication series

Name	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume	1

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	22/10/01 → 25/10/01

Access to Document

10.1109/ICSICT.2001.981604

Cite this

Wang, G. S., Lai, Z. Q., Meng, X. J., Sun, J. L., Yu, J., Guo, S. L., & Chu, J. H. (2001). PbZr_0.5Ti_0.5O₃ thin films prepared on La_0.5Sr_0.5CoO₃/LaNiO₃ heterostructures for integrated ferroelectric devices. In H. Iwai, P. Yu, B.-Z. Li, G.-P. Ru, & X.-P. Qu (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (pp. 718-721). Article 981604 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.981604

Wang, G. S. ; Lai, Z. Q. ; Meng, X. J. et al. / PbZr_0.5Ti_0.5O₃ thin films prepared on La_0.5Sr_0.5CoO₃/LaNiO₃ heterostructures for integrated ferroelectric devices. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Hiroshi Iwai ; Paul Yu ; Bing-Zong Li ; Guo-Ping Ru ; Xin-Ping Qu. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 718-721 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).

@inproceedings{d243bf0abbe04929a2c8f24df777eeab,

title = "PbZr0.5Ti0.5O3 thin films prepared on La0.5Sr0.5CoO3/LaNiO3 heterostructures for integrated ferroelectric devices",

abstract = "La0.5Sr0.5CoO3 /LaNiO3 (LSCO/LNO) heterostructures have been grown on Si[100] substrate by chemical solution deposition (MSD) technique. PbZr0.5Ti0.5O3 (PZT) thin films are deposited onto LSCO/LNO heterostructure by a modified sol-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 μΩ·cm) of LSCO/LNO heterostructures was obtained by annealing at 750°C. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films are polycrystalline and entirely perovskite phase. The Pt/PZ|T/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 109 switching cycles. The remnant polarization Pr and the coercive field Ec are about 28 μC/cm2 and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320.",

author = "Wang, \{G. S.\} and Lai, \{Z. Q.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and J. Yu and Guo, \{S. L.\} and Chu, \{J. H.\}",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

year = "2001",

doi = "10.1109/ICSICT.2001.981604",

language = "英语",

series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "718--721",

editor = "Hiroshi Iwai and Paul Yu and Bing-Zong Li and Guo-Ping Ru and Xin-Ping Qu",

booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

address = "美国",

}

Wang, GS, Lai, ZQ, Meng, XJ, Sun, JL, Yu, J, Guo, SL & Chu, JH 2001, PbZr_0.5Ti_0.5O₃ thin films prepared on La_0.5Sr_0.5CoO₃/LaNiO₃ heterostructures for integrated ferroelectric devices. in H Iwai, P Yu, B-Z Li, G-P Ru & X-P Qu (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 981604, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 718-721, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 22/10/01. https://doi.org/10.1109/ICSICT.2001.981604

PbZr_0.5Ti_0.5O₃ thin films prepared on La_0.5Sr_0.5CoO₃/LaNiO₃ heterostructures for integrated ferroelectric devices. / Wang, G. S.; Lai, Z. Q.; Meng, X. J. et al.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Hiroshi Iwai; Paul Yu; Bing-Zong Li; Guo-Ping Ru; Xin-Ping Qu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 718-721 981604 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - PbZr0.5Ti0.5O3 thin films prepared on La0.5Sr0.5CoO3/LaNiO3 heterostructures for integrated ferroelectric devices

AU - Wang, G. S.

AU - Lai, Z. Q.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Yu, J.

AU - Guo, S. L.

AU - Chu, J. H.

PY - 2001

Y1 - 2001

N2 - La0.5Sr0.5CoO3 /LaNiO3 (LSCO/LNO) heterostructures have been grown on Si[100] substrate by chemical solution deposition (MSD) technique. PbZr0.5Ti0.5O3 (PZT) thin films are deposited onto LSCO/LNO heterostructure by a modified sol-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 μΩ·cm) of LSCO/LNO heterostructures was obtained by annealing at 750°C. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films are polycrystalline and entirely perovskite phase. The Pt/PZ|T/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 109 switching cycles. The remnant polarization Pr and the coercive field Ec are about 28 μC/cm2 and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320.

AB - La0.5Sr0.5CoO3 /LaNiO3 (LSCO/LNO) heterostructures have been grown on Si[100] substrate by chemical solution deposition (MSD) technique. PbZr0.5Ti0.5O3 (PZT) thin films are deposited onto LSCO/LNO heterostructure by a modified sol-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 μΩ·cm) of LSCO/LNO heterostructures was obtained by annealing at 750°C. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films are polycrystalline and entirely perovskite phase. The Pt/PZ|T/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 109 switching cycles. The remnant polarization Pr and the coercive field Ec are about 28 μC/cm2 and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320.

UR - https://www.scopus.com/pages/publications/84966680777

U2 - 10.1109/ICSICT.2001.981604

DO - 10.1109/ICSICT.2001.981604

M3 - 会议稿件

AN - SCOPUS:84966680777

T3 - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

SP - 718

EP - 721

BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

A2 - Iwai, Hiroshi

A2 - Yu, Paul

A2 - Li, Bing-Zong

A2 - Ru, Guo-Ping

A2 - Qu, Xin-Ping

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001

Y2 - 22 October 2001 through 25 October 2001

ER -

Wang GS, Lai ZQ, Meng XJ, Sun JL, Yu J, Guo SL et al. PbZr_0.5Ti_0.5O₃ thin films prepared on La_0.5Sr_0.5CoO₃/LaNiO₃ heterostructures for integrated ferroelectric devices. In Iwai H, Yu P, Li BZ, Ru GP, Qu XP, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 718-721. 981604. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). doi: 10.1109/ICSICT.2001.981604