Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Ke Yu; Ziqiang Zhu; Weimin Wang; Shaoqiang Chen; Qiong Li; Qun Chen; Wei Lu; Jian Zi

doi:10.1016/j.ssc.2003.12.013

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Ke Yu^*
, Ziqiang Zhu
, Weimin Wang
, Shaoqiang Chen
, Qiong Li
, Qun Chen
, Wei Lu
, Jian Zi

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.

Original language	English
Pages (from-to)	555-558
Number of pages	4
Journal	Solid State Communications
Volume	129
Issue number	9
DOIs	https://doi.org/10.1016/j.ssc.2003.12.013
State	Published - Mar 2004

Keywords

A. Silicon nanocrystallites
E. Electron field emission

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10.1016/j.ssc.2003.12.013

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@article{3d993999ce084976bce02b32a50edd66,

title = "Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics",

abstract = "Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.",

keywords = "A. Silicon nanocrystallites, E. Electron field emission",

author = "Ke Yu and Ziqiang Zhu and Weimin Wang and Shaoqiang Chen and Qiong Li and Qun Chen and Wei Lu and Jian Zi",

year = "2004",

month = mar,

doi = "10.1016/j.ssc.2003.12.013",

language = "英语",

volume = "129",

pages = "555--558",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

AU - Yu, Ke

AU - Zhu, Ziqiang

AU - Wang, Weimin

AU - Chen, Shaoqiang

AU - Li, Qiong

AU - Chen, Qun

AU - Lu, Wei

AU - Zi, Jian

PY - 2004/3

Y1 - 2004/3

N2 - Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.

AB - Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.

KW - A. Silicon nanocrystallites

KW - E. Electron field emission

UR - https://www.scopus.com/pages/publications/0348231686

U2 - 10.1016/j.ssc.2003.12.013

DO - 10.1016/j.ssc.2003.12.013

M3 - 文章

AN - SCOPUS:0348231686

SN - 0038-1098

VL - 129

SP - 555

EP - 558

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

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Keywords

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