Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror

Sanjun Zhang; E. Wu; Haifeng Pan; Heping Zeng

doi:10.1109/JQE.2004.826418

Passive mode locking in a diode-pumped Nd:GdVO₄ laser with a semiconductor saturable absorber mirror

Sanjun Zhang^*
, E. Wu
, Haifeng Pan
, Heping Zeng

^*Corresponding author for this work

Institute for Advanced Study in Precision Spectroscopy

East China Normal University

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

We demonstrate Q-switched and CW passive mode locking in a laser-diode-pumped Nd:GdVO₄ laser with a semiconductor saturable absorber mirror. The repetition rate of the Q-switched envelope increased from 23.1 to 260 kHz as the pump power increased from 1.75 to 13.0 W. At a pump power of 13.7 W, the Q-switched mode locking changed to CW mode locking. The maximum average output power of 4.9 W with a 140-MHz repetition rate was obtained at a pump power of 17.9 W and the single mode-locked pulse energy was 0.035 μJ. The CW mode-locked pulse duration was measured to be ∼11.5 ps.

Original language	English
Pages (from-to)	505-508
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	40
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2004.826418
State	Published - May 2004

Keywords

CW mode locking
Diode-pumped solid-state laser
Nd:GdVO
Q-switched mode-locking

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10.1109/JQE.2004.826418

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title = "Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror",

abstract = "We demonstrate Q-switched and CW passive mode locking in a laser-diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror. The repetition rate of the Q-switched envelope increased from 23.1 to 260 kHz as the pump power increased from 1.75 to 13.0 W. At a pump power of 13.7 W, the Q-switched mode locking changed to CW mode locking. The maximum average output power of 4.9 W with a 140-MHz repetition rate was obtained at a pump power of 17.9 W and the single mode-locked pulse energy was 0.035 μJ. The CW mode-locked pulse duration was measured to be ∼11.5 ps.",

keywords = "CW mode locking, Diode-pumped solid-state laser, Nd:GdVO, Q-switched mode-locking",

author = "Sanjun Zhang and E. Wu and Haifeng Pan and Heping Zeng",

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T1 - Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror

AU - Zhang, Sanjun

AU - Wu, E.

AU - Pan, Haifeng

AU - Zeng, Heping

PY - 2004/5

Y1 - 2004/5

N2 - We demonstrate Q-switched and CW passive mode locking in a laser-diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror. The repetition rate of the Q-switched envelope increased from 23.1 to 260 kHz as the pump power increased from 1.75 to 13.0 W. At a pump power of 13.7 W, the Q-switched mode locking changed to CW mode locking. The maximum average output power of 4.9 W with a 140-MHz repetition rate was obtained at a pump power of 17.9 W and the single mode-locked pulse energy was 0.035 μJ. The CW mode-locked pulse duration was measured to be ∼11.5 ps.

AB - We demonstrate Q-switched and CW passive mode locking in a laser-diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror. The repetition rate of the Q-switched envelope increased from 23.1 to 260 kHz as the pump power increased from 1.75 to 13.0 W. At a pump power of 13.7 W, the Q-switched mode locking changed to CW mode locking. The maximum average output power of 4.9 W with a 140-MHz repetition rate was obtained at a pump power of 17.9 W and the single mode-locked pulse energy was 0.035 μJ. The CW mode-locked pulse duration was measured to be ∼11.5 ps.

KW - CW mode locking

KW - Diode-pumped solid-state laser

KW - Nd:GdVO

KW - Q-switched mode-locking

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DO - 10.1109/JQE.2004.826418

M3 - 文章

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SN - 0018-9197

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 5

ER -

Passive mode locking in a diode-pumped Nd:GdVO₄ laser with a semiconductor saturable absorber mirror

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Keywords

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