Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si

Yue He; Ya Nan Dou; Xiao Guang Ma; Shao Bin Chen; Jun Hao Chu

Passivation and stability of thermal atomic layer deposited Al₂O₃ on CZ-Si

Yue He^*
, Ya Nan Dou
, Xiao Guang Ma
, Shao Bin Chen
, Jun Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Atomic layer deposited (ALD) aluminum oxide (Al₂O₃) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30 nm Al₂O₃ films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al₂O₃ film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.

Original language	English
Article number	248102
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	61
Issue number	24
State	Published - 20 Dec 2012
Externally published	Yes

Keywords

AlO
Surface passivation
Thermal atomic layer deposition
c-Si solar cell

Cite this

@article{6d80d544aed34793bde878b0f5bfe2b7,

title = "Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si",

abstract = "Atomic layer deposited (ALD) aluminum oxide (Al2O3) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30 nm Al2O3 films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al2O3 film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.",

keywords = "AlO, Surface passivation, Thermal atomic layer deposition, c-Si solar cell",

author = "Yue He and Dou, \{Ya Nan\} and Ma, \{Xiao Guang\} and Chen, \{Shao Bin\} and Chu, \{Jun Hao\}",

year = "2012",

month = dec,

day = "20",

language = "英语",

volume = "61",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Institute of Physics, Chinese Academy of Sciences",

number = "24",

}

TY - JOUR

T1 - Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si

AU - He, Yue

AU - Dou, Ya Nan

AU - Ma, Xiao Guang

AU - Chen, Shao Bin

AU - Chu, Jun Hao

PY - 2012/12/20

Y1 - 2012/12/20

N2 - Atomic layer deposited (ALD) aluminum oxide (Al2O3) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30 nm Al2O3 films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al2O3 film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.

AB - Atomic layer deposited (ALD) aluminum oxide (Al2O3) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30 nm Al2O3 films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al2O3 film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.

KW - AlO

KW - Surface passivation

KW - Thermal atomic layer deposition

KW - c-Si solar cell

UR - https://www.scopus.com/pages/publications/84872585686

M3 - 文章

AN - SCOPUS:84872585686

SN - 1000-3290

VL - 61

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 24

M1 - 248102

ER -

Passivation and stability of thermal atomic layer deposited Al₂O₃ on CZ-Si

Abstract

Keywords

Other files and links

Fingerprint

Cite this