Oxygen-soluble gate electrodes for prolonged high-κ gate-stack reliability

Nagarajan Raghavan; Kin Leong Pey; Xing Wu; Wenhu Liu; Xiang Li; Michel Bosman; Thomas Kauerauf

doi:10.1109/LED.2010.2099096

Oxygen-soluble gate electrodes for prolonged high-κ gate-stack reliability

Nagarajan Raghavan^*
, Kin Leong Pey
, Xing Wu
, Wenhu Liu
, Xiang Li
, Michel Bosman
, Thomas Kauerauf

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- κ gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metaloxidesemiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.

Original language	English
Article number	5680690
Pages (from-to)	252-254
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2099096
State	Published - Mar 2011
Externally published	Yes

Keywords

Design for reliability (DFR)
high-κ (HK)
oxygen vacancy
percolation
soft breakdown (SBD)
solubility
time dependent dielectric breakdown (TDDB)

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10.1109/LED.2010.2099096

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title = "Oxygen-soluble gate electrodes for prolonged high-κ gate-stack reliability",

abstract = "We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- κ gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metaloxidesemiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.",

keywords = "Design for reliability (DFR), high-κ (HK), oxygen vacancy, percolation, soft breakdown (SBD), solubility, time dependent dielectric breakdown (TDDB)",

author = "Nagarajan Raghavan and Pey, \{Kin Leong\} and Xing Wu and Wenhu Liu and Xiang Li and Michel Bosman and Thomas Kauerauf",

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doi = "10.1109/LED.2010.2099096",

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T1 - Oxygen-soluble gate electrodes for prolonged high-κ gate-stack reliability

AU - Raghavan, Nagarajan

AU - Pey, Kin Leong

AU - Wu, Xing

AU - Liu, Wenhu

AU - Li, Xiang

AU - Bosman, Michel

AU - Kauerauf, Thomas

PY - 2011/3

Y1 - 2011/3

N2 - We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- κ gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metaloxidesemiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.

AB - We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- κ gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metaloxidesemiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.

KW - Design for reliability (DFR)

KW - high-κ (HK)

KW - oxygen vacancy

KW - percolation

KW - soft breakdown (SBD)

KW - solubility

KW - time dependent dielectric breakdown (TDDB)

UR - https://www.scopus.com/pages/publications/79951959814

U2 - 10.1109/LED.2010.2099096

DO - 10.1109/LED.2010.2099096

M3 - 文章

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JO - IEEE Electron Device Letters

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M1 - 5680690

ER -

Oxygen-soluble gate electrodes for prolonged high-κ gate-stack reliability

Abstract

Keywords

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