Oxidation endurance of boron nitride nanotube field emitters

Yenan Song*, Dong Hoon Shin, Ki Nam Yun, Cheol Jin Lee, Yoon Ho Song, William I. Milne

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

Original languageEnglish
Title of host publicationTechnical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
EditorsHans-Heinrich Braun, Oliver Groening, Martin Paraliev, Thomas Feurer, Soichiro Tsujino, Jens Gobrecht
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages235-236
Number of pages2
ISBN (Electronic)9781479953080
DOIs
StatePublished - 2014
Externally publishedYes
Event2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 - Engelberg, Switzerland
Duration: 6 Jul 201410 Jul 2014

Publication series

NameTechnical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014

Conference

Conference2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
Country/TerritorySwitzerland
CityEngelberg
Period6/07/1410/07/14

Keywords

  • Boron nitride nanotubes
  • Field emission
  • Oxidation endurance

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