Orthogonal PbS nanowire arrays and networks and their Raman scattering behavior

Jian Ping Ge; Jin Wang; Hao Xu Zhang; Xun Wang; Qing Peng; Ya Dong Li

doi:10.1002/chem.200400633

Orthogonal PbS nanowire arrays and networks and their Raman scattering behavior

Jian Ping Ge
, Jin Wang
, Hao Xu Zhang
, Xun Wang
, Qing Peng
, Ya Dong Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

133 Scopus citations

Abstract

Three-dimensional, orthogonal lead sulfide (PbS) nanowire arrays and networks have been prepared by using a simple, atmospheric pressure chemical vapor deposition (APCVD) method. These uniform nanowires (average diameter 30 nm) grow epitaxially from the surface of the initial PbS crystal seeds and form orthogonal arrays and networks in space. The growth mechanism has been explored, and the process was classified as homogeneous, epitaxial growth in the (200) directions. Furthermore, Raman spectra of PbS nanowires are reported here, and their characteristic Raman peak (190 cm^-1, no shoulder) could be used as a unique probe for the study of PbS nanomaterials.

Original language	English
Pages (from-to)	1889-1894
Number of pages	6
Journal	Chemistry - A European Journal
Volume	11
Issue number	6
DOIs	https://doi.org/10.1002/chem.200400633
State	Published - 4 Mar 2005
Externally published	Yes

Keywords

Chemical vapor deposition
Crystal growth
Nanostructures
Raman spectroscopy

Access to Document

10.1002/chem.200400633

Cite this

@article{9d939a61cc094ccd9c9788c91698ec13,

title = "Orthogonal PbS nanowire arrays and networks and their Raman scattering behavior",

abstract = "Three-dimensional, orthogonal lead sulfide (PbS) nanowire arrays and networks have been prepared by using a simple, atmospheric pressure chemical vapor deposition (APCVD) method. These uniform nanowires (average diameter 30 nm) grow epitaxially from the surface of the initial PbS crystal seeds and form orthogonal arrays and networks in space. The growth mechanism has been explored, and the process was classified as homogeneous, epitaxial growth in the (200) directions. Furthermore, Raman spectra of PbS nanowires are reported here, and their characteristic Raman peak (190 cm-1, no shoulder) could be used as a unique probe for the study of PbS nanomaterials.",

keywords = "Chemical vapor deposition, Crystal growth, Nanostructures, Raman spectroscopy",

author = "Ge, \{Jian Ping\} and Jin Wang and Zhang, \{Hao Xu\} and Xun Wang and Qing Peng and Li, \{Ya Dong\}",

year = "2005",

month = mar,

day = "4",

doi = "10.1002/chem.200400633",

language = "英语",

volume = "11",

pages = "1889--1894",

journal = "Chemistry - A European Journal",

issn = "0947-6539",

publisher = "John Wiley and Sons Inc",

number = "6",

}

TY - JOUR

T1 - Orthogonal PbS nanowire arrays and networks and their Raman scattering behavior

AU - Ge, Jian Ping

AU - Wang, Jin

AU - Zhang, Hao Xu

AU - Wang, Xun

AU - Peng, Qing

AU - Li, Ya Dong

PY - 2005/3/4

Y1 - 2005/3/4

N2 - Three-dimensional, orthogonal lead sulfide (PbS) nanowire arrays and networks have been prepared by using a simple, atmospheric pressure chemical vapor deposition (APCVD) method. These uniform nanowires (average diameter 30 nm) grow epitaxially from the surface of the initial PbS crystal seeds and form orthogonal arrays and networks in space. The growth mechanism has been explored, and the process was classified as homogeneous, epitaxial growth in the (200) directions. Furthermore, Raman spectra of PbS nanowires are reported here, and their characteristic Raman peak (190 cm-1, no shoulder) could be used as a unique probe for the study of PbS nanomaterials.

AB - Three-dimensional, orthogonal lead sulfide (PbS) nanowire arrays and networks have been prepared by using a simple, atmospheric pressure chemical vapor deposition (APCVD) method. These uniform nanowires (average diameter 30 nm) grow epitaxially from the surface of the initial PbS crystal seeds and form orthogonal arrays and networks in space. The growth mechanism has been explored, and the process was classified as homogeneous, epitaxial growth in the (200) directions. Furthermore, Raman spectra of PbS nanowires are reported here, and their characteristic Raman peak (190 cm-1, no shoulder) could be used as a unique probe for the study of PbS nanomaterials.

KW - Chemical vapor deposition

KW - Crystal growth

KW - Nanostructures

KW - Raman spectroscopy

UR - https://www.scopus.com/pages/publications/15044353704

U2 - 10.1002/chem.200400633

DO - 10.1002/chem.200400633

M3 - 文章

AN - SCOPUS:15044353704

SN - 0947-6539

VL - 11

SP - 1889

EP - 1894

JO - Chemistry - A European Journal

JF - Chemistry - A European Journal

IS - 6

ER -

Orthogonal PbS nanowire arrays and networks and their Raman scattering behavior

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this