Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

Robert Kernke; Han Wang; Jin Hong; Fangyu Yue; Junhao Chu; Jens W. Tomm

doi:10.1364/OSAC.2.001496

Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

Robert Kernke
, Han Wang
, Jin Hong
, Fangyu Yue^*
, Junhao Chu
, Jens W. Tomm

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.

Original language	English
Pages (from-to)	1496-1501
Number of pages	6
Journal	OSA Continuum
Volume	2
Issue number	5
DOIs	https://doi.org/10.1364/OSAC.2.001496
State	Published - 15 May 2019

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@article{19c078d1c323427990c7eb48354a81bf,

title = "Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers",

abstract = "Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.",

author = "Robert Kernke and Han Wang and Jin Hong and Fangyu Yue and Junhao Chu and Tomm, \{Jens W.\}",

note = "Publisher Copyright: {\textcopyright} 2019 Optical Society of America.",

year = "2019",

month = may,

day = "15",

doi = "10.1364/OSAC.2.001496",

language = "英语",

volume = "2",

pages = "1496--1501",

journal = "OSA Continuum",

issn = "2578-7519",

publisher = "Optica Publishing Group (formerly OSA)",

number = "5",

}

TY - JOUR

T1 - Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

AU - Kernke, Robert

AU - Wang, Han

AU - Hong, Jin

AU - Yue, Fangyu

AU - Chu, Junhao

AU - Tomm, Jens W.

PY - 2019/5/15

Y1 - 2019/5/15

N2 - Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.

AB - Yellow emissions at 580 nm from the operation of 450 nm emitting (In,Ga,Al)N diode lasers are investigated. Spatial and spectral behaviors were analyzed and modeled. Consistent results were obtained and the emission was identified coming from the active region of the laser. This emission has the potential to be useful for analytical purposes, e.g. for the determination of refractive indices or the visualization of non-equilibrium carrier profiles along devices.

UR - https://www.scopus.com/pages/publications/85067789982

U2 - 10.1364/OSAC.2.001496

DO - 10.1364/OSAC.2.001496

M3 - 文章

AN - SCOPUS:85067789982

SN - 2578-7519

VL - 2

SP - 1496

EP - 1501

JO - OSA Continuum

JF - OSA Continuum

IS - 5

ER -

Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers

Abstract

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