Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer

Yun Liu; Yanling Shi; Xiao Feng; Yong Wang; Shaoqiang Chen; Xiaojin Li; Ziqiang Zhu; Zongsheng Lai

doi:10.1117/12.607442

Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer

Yun Liu^*
, Yanling Shi
, Xiao Feng
, Yong Wang
, Shaoqiang Chen
, Xiaojin Li
, Ziqiang Zhu
, Zongsheng Lai

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Oxidized porous silicon/porous silicon (OPS/PS) has been introduced as a low-loss substrate for an on-chip LC low-pass filter (LPF). The LPF is optimally designed with midband insertion loss (MIL) of -4.5dB and nominal cutoff frequency at 900MHz. The fabrication of the LPF based OPS/PS is in prevailing CMOS process. Experiments show that the performance of the LPF has been greatly improved with MIL of -4.54dB that meets the designed value quite well. And in comparison with MIL of LPF on SiO₂/Si (8 Ω · cm), MIL with the proposed interlayer is lowered by 8dB, which implies that the microwave loss resulting from the substrate part can be substantially suppressed by introducing OPS/PS.

Original language	English
Article number	121
Pages (from-to)	523-526
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.607442
State	Published - 2005
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

Low Pass Filter (LPF)
On-chip Inductor
Oxidized Porous Silicon (OPS)
Porous Silicon (PS)

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10.1117/12.607442

Cite this

@article{9a24214aafa1407ebc75457f3aea6b2d,

title = "Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer",

abstract = "Oxidized porous silicon/porous silicon (OPS/PS) has been introduced as a low-loss substrate for an on-chip LC low-pass filter (LPF). The LPF is optimally designed with midband insertion loss (MIL) of -4.5dB and nominal cutoff frequency at 900MHz. The fabrication of the LPF based OPS/PS is in prevailing CMOS process. Experiments show that the performance of the LPF has been greatly improved with MIL of -4.54dB that meets the designed value quite well. And in comparison with MIL of LPF on SiO2/Si (8 Ω · cm), MIL with the proposed interlayer is lowered by 8dB, which implies that the microwave loss resulting from the substrate part can be substantially suppressed by introducing OPS/PS.",

keywords = "Low Pass Filter (LPF), On-chip Inductor, Oxidized Porous Silicon (OPS), Porous Silicon (PS)",

author = "Yun Liu and Yanling Shi and Xiao Feng and Yong Wang and Shaoqiang Chen and Xiaojin Li and Ziqiang Zhu and Zongsheng Lai",

year = "2005",

doi = "10.1117/12.607442",

language = "英语",

volume = "5774",

pages = "523--526",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

TY - JOUR

T1 - Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer

AU - Liu, Yun

AU - Shi, Yanling

AU - Feng, Xiao

AU - Wang, Yong

AU - Chen, Shaoqiang

AU - Li, Xiaojin

AU - Zhu, Ziqiang

AU - Lai, Zongsheng

PY - 2005

Y1 - 2005

N2 - Oxidized porous silicon/porous silicon (OPS/PS) has been introduced as a low-loss substrate for an on-chip LC low-pass filter (LPF). The LPF is optimally designed with midband insertion loss (MIL) of -4.5dB and nominal cutoff frequency at 900MHz. The fabrication of the LPF based OPS/PS is in prevailing CMOS process. Experiments show that the performance of the LPF has been greatly improved with MIL of -4.54dB that meets the designed value quite well. And in comparison with MIL of LPF on SiO2/Si (8 Ω · cm), MIL with the proposed interlayer is lowered by 8dB, which implies that the microwave loss resulting from the substrate part can be substantially suppressed by introducing OPS/PS.

AB - Oxidized porous silicon/porous silicon (OPS/PS) has been introduced as a low-loss substrate for an on-chip LC low-pass filter (LPF). The LPF is optimally designed with midband insertion loss (MIL) of -4.5dB and nominal cutoff frequency at 900MHz. The fabrication of the LPF based OPS/PS is in prevailing CMOS process. Experiments show that the performance of the LPF has been greatly improved with MIL of -4.54dB that meets the designed value quite well. And in comparison with MIL of LPF on SiO2/Si (8 Ω · cm), MIL with the proposed interlayer is lowered by 8dB, which implies that the microwave loss resulting from the substrate part can be substantially suppressed by introducing OPS/PS.

KW - Low Pass Filter (LPF)

KW - On-chip Inductor

KW - Oxidized Porous Silicon (OPS)

KW - Porous Silicon (PS)

UR - https://www.scopus.com/pages/publications/25644443309

U2 - 10.1117/12.607442

DO - 10.1117/12.607442

M3 - 会议文章

AN - SCOPUS:25644443309

SN - 0277-786X

VL - 5774

SP - 523

EP - 526

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 121

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer

Abstract

Keywords

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