Optimization of Thermal Design for GaN-based Laser Diodes

  • Junfei Wang
  • , Zhanhong Ma
  • , Shan Lin
  • , Xiaodong Li
  • , Tiangui Hu
  • , Lixia Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Here, the temperature distribution of O 56 mm GaN-based laser diodes emitting at 515nm, 30 mW packaged with different materials and structures have been simulated using Finite Element Method approach. Results show that the substrate material plays an important role in determining the overall thermal resistance of the laser diodes. Afterwards, by changing the different layer thicknesses, the overall thermal resistances have been optimized, which can be reduced by 71.1%. The design and findings can reduce the junction temperature of GaN-based laser diodes under high current density and help to improve the reliability during the operation.

Original languageEnglish
Title of host publication2020 17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina
Subtitle of host publicationIFWS 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages255-259
Number of pages5
ISBN (Electronic)9780738111889
DOIs
StatePublished - 23 Nov 2020
Externally publishedYes
Event17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020 - Shenzhen, China
Duration: 23 Nov 202025 Nov 2020

Publication series

Name2020 17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

Conference

Conference17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020
Country/TerritoryChina
CityShenzhen
Period23/11/2025/11/20

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