Optimization of the cell structure for radiation-hardened power MOSFETs

Teng Wang; Xin Wan; Hu Jin; Hao Li; Yabin Sun; Renrong Liang; Jun Xu; Lirong Zheng

doi:10.3390/electronics8060598

Optimization of the cell structure for radiation-hardened power MOSFETs

Teng Wang
, Xin Wan^*
, Hu Jin
, Hao Li
, Yabin Sun
, Renrong Liang
, Jun Xu
, Lirong Zheng

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiationhardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices’ total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.

Original language	English
Article number	598
Journal	Electronics (Switzerland)
Volume	8
Issue number	6
DOIs	https://doi.org/10.3390/electronics8060598
State	Published - Jun 2019

Keywords

Power MOSFETs
Radiation-hardened
SEB
Single event gate rupture (SEGR)

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10.3390/electronics8060598

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title = "Optimization of the cell structure for radiation-hardened power MOSFETs",

abstract = "Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiationhardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices{\textquoteright} total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.",

keywords = "Power MOSFETs, Radiation-hardened, SEB, Single event gate rupture (SEGR)",

author = "Teng Wang and Xin Wan and Hu Jin and Hao Li and Yabin Sun and Renrong Liang and Jun Xu and Lirong Zheng",

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year = "2019",

month = jun,

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volume = "8",

journal = "Electronics (Switzerland)",

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T1 - Optimization of the cell structure for radiation-hardened power MOSFETs

AU - Wang, Teng

AU - Wan, Xin

AU - Jin, Hu

AU - Li, Hao

AU - Sun, Yabin

AU - Liang, Renrong

AU - Xu, Jun

AU - Zheng, Lirong

PY - 2019/6

Y1 - 2019/6

N2 - Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiationhardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices’ total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.

AB - Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiationhardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices’ total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.

KW - Power MOSFETs

KW - Radiation-hardened

KW - SEB

KW - Single event gate rupture (SEGR)

UR - https://www.scopus.com/pages/publications/85069440328

U2 - 10.3390/electronics8060598

DO - 10.3390/electronics8060598

M3 - 文章

AN - SCOPUS:85069440328

SN - 2079-9292

VL - 8

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 6

M1 - 598

ER -

Optimization of the cell structure for radiation-hardened power MOSFETs

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Keywords

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