Optimization of on-chip inductor and its application in low-pass filter

Yun Liu; Yong Wang; Yanling Shi; Ling Jiang; Shoumian Chen; Yuhang Zhao; Xiaojin Li

Optimization of on-chip inductor and its application in low-pass filter

Yun Liu^*
, Yong Wang
, Yanling Shi
, Ling Jiang
, Shoumian Chen
, Yuhang Zhao
, Xiaojin Li

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

This paper presents the design of on-chip inductor employing Greenhouse theory. The electrical parameter of the inductor is converted to physical dimentions of the inductor by approximate algorithm, and vice versa. Based on the optimization of inductor, an equivalent circuit model of the low-pass filter (LPF) including substrate parasitics is proposed. The designed LPF is fabricated on high-resistivity silicon substrate in conventional CMOS process. Measurements on the three-pole maximally flat low-pass filter give -3dB bandwidth of 977MHz that is close to the nominal design value of 980MHz. on-chip inductor, low-pass filter, quality factor (Q), cutoff frequency, midband insertion loss

Original language	English
Pages	221-223
Number of pages	3
State	Published - 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	18/10/04 → 21/10/04

Cite this

@conference{7226779da72c43c8aea27f0648b44ff7,

title = "Optimization of on-chip inductor and its application in low-pass filter",

abstract = "This paper presents the design of on-chip inductor employing Greenhouse theory. The electrical parameter of the inductor is converted to physical dimentions of the inductor by approximate algorithm, and vice versa. Based on the optimization of inductor, an equivalent circuit model of the low-pass filter (LPF) including substrate parasitics is proposed. The designed LPF is fabricated on high-resistivity silicon substrate in conventional CMOS process. Measurements on the three-pole maximally flat low-pass filter give -3dB bandwidth of 977MHz that is close to the nominal design value of 980MHz. on-chip inductor, low-pass filter, quality factor (Q), cutoff frequency, midband insertion loss",

author = "Yun Liu and Yong Wang and Yanling Shi and Ling Jiang and Shoumian Chen and Yuhang Zhao and Xiaojin Li",

year = "2004",

language = "英语",

pages = "221--223",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - Optimization of on-chip inductor and its application in low-pass filter

AU - Liu, Yun

AU - Wang, Yong

AU - Shi, Yanling

AU - Jiang, Ling

AU - Chen, Shoumian

AU - Zhao, Yuhang

AU - Li, Xiaojin

PY - 2004

Y1 - 2004

N2 - This paper presents the design of on-chip inductor employing Greenhouse theory. The electrical parameter of the inductor is converted to physical dimentions of the inductor by approximate algorithm, and vice versa. Based on the optimization of inductor, an equivalent circuit model of the low-pass filter (LPF) including substrate parasitics is proposed. The designed LPF is fabricated on high-resistivity silicon substrate in conventional CMOS process. Measurements on the three-pole maximally flat low-pass filter give -3dB bandwidth of 977MHz that is close to the nominal design value of 980MHz. on-chip inductor, low-pass filter, quality factor (Q), cutoff frequency, midband insertion loss

AB - This paper presents the design of on-chip inductor employing Greenhouse theory. The electrical parameter of the inductor is converted to physical dimentions of the inductor by approximate algorithm, and vice versa. Based on the optimization of inductor, an equivalent circuit model of the low-pass filter (LPF) including substrate parasitics is proposed. The designed LPF is fabricated on high-resistivity silicon substrate in conventional CMOS process. Measurements on the three-pole maximally flat low-pass filter give -3dB bandwidth of 977MHz that is close to the nominal design value of 980MHz. on-chip inductor, low-pass filter, quality factor (Q), cutoff frequency, midband insertion loss

UR - https://www.scopus.com/pages/publications/21644454165

M3 - 论文

AN - SCOPUS:21644454165

SP - 221

EP - 223

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Optimization of on-chip inductor and its application in low-pass filter

Abstract

Conference

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