Optical transition of porous silicon prepared at different anodization temperatures

Likun Pan; Haibo Li; Zhuo Sun; Changqing Sun

doi:10.1142/S0218625X09012706

Optical transition of porous silicon prepared at different anodization temperatures

Likun Pan, Haibo Li, Zhuo Sun, Changqing Sun

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, and Si-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse variations happening at temperature below and above the critical temperature is discussed.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Surface Review and Letters
Volume	16
Issue number	3
DOIs	https://doi.org/10.1142/S0218625X09012706
State	Published - Jun 2009

Keywords

Anodization temperature
Optical transition
Porous silicon

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1142/S0218625X09012706

Cite this

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title = "Optical transition of porous silicon prepared at different anodization temperatures",

abstract = "Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, and Si-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse variations happening at temperature below and above the critical temperature is discussed.",

keywords = "Anodization temperature, Optical transition, Porous silicon",

author = "Likun Pan and Haibo Li and Zhuo Sun and Changqing Sun",

year = "2009",

month = jun,

doi = "10.1142/S0218625X09012706",

language = "英语",

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journal = "Surface Review and Letters",

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T1 - Optical transition of porous silicon prepared at different anodization temperatures

AU - Pan, Likun

AU - Li, Haibo

AU - Sun, Zhuo

AU - Sun, Changqing

PY - 2009/6

Y1 - 2009/6

N2 - Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, and Si-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse variations happening at temperature below and above the critical temperature is discussed.

AB - Photoluminescence, photoabsorption, and X-ray photoelectron spectroscopic study revealed that an optical transition of porous silicon from red-shift to blue-shift, and Si-2p binding energy transition from low to high at a critical anodization temperature, 343 K. Possible origin for the reverse variations happening at temperature below and above the critical temperature is discussed.

KW - Anodization temperature

KW - Optical transition

KW - Porous silicon

UR - https://www.scopus.com/pages/publications/68349133367

U2 - 10.1142/S0218625X09012706

DO - 10.1142/S0218625X09012706

M3 - 文章

AN - SCOPUS:68349133367

SN - 0218-625X

VL - 16

SP - 351

EP - 354

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 3

ER -

Optical transition of porous silicon prepared at different anodization temperatures

Abstract

Keywords

UN SDGs

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