Optical properties of TiO 2 thin film grown on quartz substrate by sol-gel method

Jianjun Tian, Hongmei Deng, Lin Sun, Hui Kong, Pingxiong Yang, Junhao Chu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

TiO 2 film was deposited on quartz substrate by sol-gel method. X-ray diffraction analysis and Raman scattering measurement indicate that the TiO 2 film is the pure rutile phase structure. From photoluminescence spectra, it is found that the TiO 2 film shows a near-infrared luminescence band centered at about 832 nm, and two visible luminescence bands centered at about 426 nm and 524 nm, respectively. The refractive index n, extinct coefficient k, optical band gap EOBG and thickness d of TiO 2 film were extracted by fitting transmission spectra with the Adachi's dielectric function model and a three-phase layered model. It is found that n value increases and then decreases with increasing wavelength, while k decreases continuously. The thickness of TiO 2 film is about 297 nm. EOBG value is about 3.72eV and larger than that attained by Tauc's law, which is about 3.28eV.

Original languageEnglish
Title of host publicationPhotonics and Optolectronics Meetings (POEM) 2011
Subtitle of host publicationOptoelectronic Devices and Integration
DOIs
StatePublished - 2012
EventPhotonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration - Wuhan, China
Duration: 2 Nov 20115 Nov 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8333
ISSN (Print)0277-786X

Conference

ConferencePhotonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration
Country/TerritoryChina
CityWuhan
Period2/11/115/11/11

Keywords

  • Optical properties
  • TiO films
  • rutile

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