Optical fatigue of SrBi2 Ta0.6 Nb1.4 O9 ferroelectric thin films

Mei Rong Shi; Ming Guo; Ping Xiong Yang

Optical fatigue of SrBi₂ Ta_0.6 Nb_1.4 O₉ ferroelectric thin films

Mei Rong Shi^*
, Ming Guo
, Ping Xiong Yang

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

Abstract

High quality SrBi₂Ta_0.6Nb_1.4O ₉(SBTN) ferroelectric thin films were fabricated on platinized silicon by PLD. Electrical fatigue and optical fatigue of SBTN ferroelectric thin films were studied, respectively. The fatigue mechanisms in the thin films were analyzed. The results indicate the excellent fatigue resistance of electrical properties under electrical fatigue for SBTN ferroelectric thin films. However, by using the illumination of a 200W Hg arc lamp at 0.9V, it was found that the average remanent polarization was dropped by nearly 51% due to the bias/illumination treatment. The optically induced polarization fatigue in SBTN films is due to trapping of photo-generated charge carriers at domain boundaries.

Original language	English
Pages (from-to)	408-410
Number of pages	3
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	25
Issue number	6
State	Published - Dec 2006

Keywords

Ferroelectric
Optical fatigue
Thin films

Cite this

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title = "Optical fatigue of SrBi2 Ta0.6 Nb1.4 O9 ferroelectric thin films",

abstract = "High quality SrBi2Ta0.6Nb1.4O 9(SBTN) ferroelectric thin films were fabricated on platinized silicon by PLD. Electrical fatigue and optical fatigue of SBTN ferroelectric thin films were studied, respectively. The fatigue mechanisms in the thin films were analyzed. The results indicate the excellent fatigue resistance of electrical properties under electrical fatigue for SBTN ferroelectric thin films. However, by using the illumination of a 200W Hg arc lamp at 0.9V, it was found that the average remanent polarization was dropped by nearly 51\% due to the bias/illumination treatment. The optically induced polarization fatigue in SBTN films is due to trapping of photo-generated charge carriers at domain boundaries.",

keywords = "Ferroelectric, Optical fatigue, Thin films",

author = "Shi, \{Mei Rong\} and Ming Guo and Yang, \{Ping Xiong\}",

year = "2006",

month = dec,

language = "英语",

volume = "25",

pages = "408--410",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "6",

}

TY - JOUR

T1 - Optical fatigue of SrBi2 Ta0.6 Nb1.4 O9 ferroelectric thin films

AU - Shi, Mei Rong

AU - Guo, Ming

AU - Yang, Ping Xiong

PY - 2006/12

Y1 - 2006/12

N2 - High quality SrBi2Ta0.6Nb1.4O 9(SBTN) ferroelectric thin films were fabricated on platinized silicon by PLD. Electrical fatigue and optical fatigue of SBTN ferroelectric thin films were studied, respectively. The fatigue mechanisms in the thin films were analyzed. The results indicate the excellent fatigue resistance of electrical properties under electrical fatigue for SBTN ferroelectric thin films. However, by using the illumination of a 200W Hg arc lamp at 0.9V, it was found that the average remanent polarization was dropped by nearly 51% due to the bias/illumination treatment. The optically induced polarization fatigue in SBTN films is due to trapping of photo-generated charge carriers at domain boundaries.

AB - High quality SrBi2Ta0.6Nb1.4O 9(SBTN) ferroelectric thin films were fabricated on platinized silicon by PLD. Electrical fatigue and optical fatigue of SBTN ferroelectric thin films were studied, respectively. The fatigue mechanisms in the thin films were analyzed. The results indicate the excellent fatigue resistance of electrical properties under electrical fatigue for SBTN ferroelectric thin films. However, by using the illumination of a 200W Hg arc lamp at 0.9V, it was found that the average remanent polarization was dropped by nearly 51% due to the bias/illumination treatment. The optically induced polarization fatigue in SBTN films is due to trapping of photo-generated charge carriers at domain boundaries.

KW - Ferroelectric

KW - Optical fatigue

KW - Thin films

UR - https://www.scopus.com/pages/publications/34249311930

M3 - 文章

AN - SCOPUS:34249311930

SN - 1001-9014

VL - 25

SP - 408

EP - 410

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 6

ER -

Optical fatigue of SrBi₂ Ta_0.6 Nb_1.4 O₉ ferroelectric thin films

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