Optical and electronic bandgap manipulation behaviors of MoS2/TaSe2 van der Waals heterostructures: Experiment and theory

Fang Fang Chen; Yan Ye; Xiang Wang; Bin Zhou; Li Ping Xu; Kai Jiang; Jin Zhong Zhang; Zhi Gao Hu; Jun Hao Chu

doi:10.1016/j.cplett.2020.137926

Optical and electronic bandgap manipulation behaviors of MoS₂/TaSe₂ van der Waals heterostructures: Experiment and theory

Fang Fang Chen, Yan Ye, Xiang Wang, Bin Zhou, Li Ping Xu, Kai Jiang, Jin Zhong Zhang, Zhi Gao Hu, Jun Hao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The optical bandgap manipulation engineering of two-dimensional (2D) semiconductor heterostructure plays an important role in the development of optoelectronics and nanoelectronics. In this work, the photoluminescence (PL) peak of the MoS₂/TaSe₂ heterostructure is slightly red-shifted compared with that of MoS₂. The result is explained by the electron transfer from TaSe₂ to MoS₂, which is theoretically calculated to be about 0.00405 e. Furthermore, the experimental and theoretical results show that the work function of the heterostructure is less than that of the MoS₂. The present study promises for exploring the potential tunable optical bandgap optoelectronic devices.

Original language	English
Article number	137926
Journal	Chemical Physics Letters
Volume	758
DOIs	https://doi.org/10.1016/j.cplett.2020.137926
State	Published - Nov 2020

Keywords

2D materials
Bandgap manipulation
Charge transfer
van der Waals heterostructure

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10.1016/j.cplett.2020.137926

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title = "Optical and electronic bandgap manipulation behaviors of MoS2/TaSe2 van der Waals heterostructures: Experiment and theory",

abstract = "The optical bandgap manipulation engineering of two-dimensional (2D) semiconductor heterostructure plays an important role in the development of optoelectronics and nanoelectronics. In this work, the photoluminescence (PL) peak of the MoS2/TaSe2 heterostructure is slightly red-shifted compared with that of MoS2. The result is explained by the electron transfer from TaSe2 to MoS2, which is theoretically calculated to be about 0.00405 e. Furthermore, the experimental and theoretical results show that the work function of the heterostructure is less than that of the MoS2. The present study promises for exploring the potential tunable optical bandgap optoelectronic devices.",

keywords = "2D materials, Bandgap manipulation, Charge transfer, van der Waals heterostructure",

author = "Chen, \{Fang Fang\} and Yan Ye and Xiang Wang and Bin Zhou and Xu, \{Li Ping\} and Kai Jiang and Zhang, \{Jin Zhong\} and Hu, \{Zhi Gao\} and Chu, \{Jun Hao\}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = nov,

doi = "10.1016/j.cplett.2020.137926",

language = "英语",

volume = "758",

journal = "Chemical Physics Letters",

issn = "0009-2614",

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TY - JOUR

T1 - Optical and electronic bandgap manipulation behaviors of MoS2/TaSe2 van der Waals heterostructures

T2 - Experiment and theory

AU - Chen, Fang Fang

AU - Ye, Yan

AU - Wang, Xiang

AU - Zhou, Bin

AU - Xu, Li Ping

AU - Jiang, Kai

AU - Zhang, Jin Zhong

AU - Hu, Zhi Gao

AU - Chu, Jun Hao

PY - 2020/11

Y1 - 2020/11

N2 - The optical bandgap manipulation engineering of two-dimensional (2D) semiconductor heterostructure plays an important role in the development of optoelectronics and nanoelectronics. In this work, the photoluminescence (PL) peak of the MoS2/TaSe2 heterostructure is slightly red-shifted compared with that of MoS2. The result is explained by the electron transfer from TaSe2 to MoS2, which is theoretically calculated to be about 0.00405 e. Furthermore, the experimental and theoretical results show that the work function of the heterostructure is less than that of the MoS2. The present study promises for exploring the potential tunable optical bandgap optoelectronic devices.

AB - The optical bandgap manipulation engineering of two-dimensional (2D) semiconductor heterostructure plays an important role in the development of optoelectronics and nanoelectronics. In this work, the photoluminescence (PL) peak of the MoS2/TaSe2 heterostructure is slightly red-shifted compared with that of MoS2. The result is explained by the electron transfer from TaSe2 to MoS2, which is theoretically calculated to be about 0.00405 e. Furthermore, the experimental and theoretical results show that the work function of the heterostructure is less than that of the MoS2. The present study promises for exploring the potential tunable optical bandgap optoelectronic devices.

KW - 2D materials

KW - Bandgap manipulation

KW - Charge transfer

KW - van der Waals heterostructure

UR - https://www.scopus.com/pages/publications/85090247443

U2 - 10.1016/j.cplett.2020.137926

DO - 10.1016/j.cplett.2020.137926

M3 - 文章

AN - SCOPUS:85090247443

SN - 0009-2614

VL - 758

JO - Chemical Physics Letters

JF - Chemical Physics Letters

M1 - 137926

ER -

Optical and electronic bandgap manipulation behaviors of MoS₂/TaSe₂ van der Waals heterostructures: Experiment and theory

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