Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique

Dongji Huang; Hongmei Deng; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2010.07.020

Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique

Dongji Huang
, Hongmei Deng
, Pingxiong Yang^*
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Shanghai University

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Single-phase multiferroic BiFeO₃ thin films have been prepared on LaNiO₃/Si(100) and Si(100) wafer via sol-gel technique. The films are polycrystalline with preferring orientation of (101). The film has a conspicuous absorption in the blue and green light region, and band gap of 2.74 eV. The refractive index and the extinction coefficient of the film is about 2.36 and 0.06 at 600 nm, 2.26 and close to zero in the range of 800-1200 nm, respectively. The films also exhibit favorable ferroelectric and dielectric properties. A large photo induced open-circuit voltage was observed, indicating that the film exhibits photovoltaic behaviours.

Original language	English
Pages (from-to)	2233-2235
Number of pages	3
Journal	Materials Letters
Volume	64
Issue number	20
DOIs	https://doi.org/10.1016/j.matlet.2010.07.020
State	Published - 31 Oct 2010

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SDG 7 Affordable and Clean Energy

Keywords

BiFeO
Ferroelectric
Optical properties
Photovoltaic effect

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10.1016/j.matlet.2010.07.020

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title = "Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique",

abstract = "Single-phase multiferroic BiFeO3 thin films have been prepared on LaNiO3/Si(100) and Si(100) wafer via sol-gel technique. The films are polycrystalline with preferring orientation of (101). The film has a conspicuous absorption in the blue and green light region, and band gap of 2.74 eV. The refractive index and the extinction coefficient of the film is about 2.36 and 0.06 at 600 nm, 2.26 and close to zero in the range of 800-1200 nm, respectively. The films also exhibit favorable ferroelectric and dielectric properties. A large photo induced open-circuit voltage was observed, indicating that the film exhibits photovoltaic behaviours.",

keywords = "BiFeO, Ferroelectric, Optical properties, Photovoltaic effect",

author = "Dongji Huang and Hongmei Deng and Pingxiong Yang and Junhao Chu",

year = "2010",

month = oct,

day = "31",

doi = "10.1016/j.matlet.2010.07.020",

language = "英语",

volume = "64",

pages = "2233--2235",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "20",

}

TY - JOUR

T1 - Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique

AU - Huang, Dongji

AU - Deng, Hongmei

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2010/10/31

Y1 - 2010/10/31

N2 - Single-phase multiferroic BiFeO3 thin films have been prepared on LaNiO3/Si(100) and Si(100) wafer via sol-gel technique. The films are polycrystalline with preferring orientation of (101). The film has a conspicuous absorption in the blue and green light region, and band gap of 2.74 eV. The refractive index and the extinction coefficient of the film is about 2.36 and 0.06 at 600 nm, 2.26 and close to zero in the range of 800-1200 nm, respectively. The films also exhibit favorable ferroelectric and dielectric properties. A large photo induced open-circuit voltage was observed, indicating that the film exhibits photovoltaic behaviours.

AB - Single-phase multiferroic BiFeO3 thin films have been prepared on LaNiO3/Si(100) and Si(100) wafer via sol-gel technique. The films are polycrystalline with preferring orientation of (101). The film has a conspicuous absorption in the blue and green light region, and band gap of 2.74 eV. The refractive index and the extinction coefficient of the film is about 2.36 and 0.06 at 600 nm, 2.26 and close to zero in the range of 800-1200 nm, respectively. The films also exhibit favorable ferroelectric and dielectric properties. A large photo induced open-circuit voltage was observed, indicating that the film exhibits photovoltaic behaviours.

KW - BiFeO

KW - Ferroelectric

KW - Optical properties

KW - Photovoltaic effect

UR - https://www.scopus.com/pages/publications/77955085430

U2 - 10.1016/j.matlet.2010.07.020

DO - 10.1016/j.matlet.2010.07.020

M3 - 文章

AN - SCOPUS:77955085430

SN - 0167-577X

VL - 64

SP - 2233

EP - 2235

JO - Materials Letters

JF - Materials Letters

IS - 20

ER -

Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique

Abstract

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Keywords

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