Optical and electrical properties of highly (100)-oriented PbZr 1-xTixO3 thin films on the LaNiO3 buffer layer

Jian Yu; X. J. Meng; J. L. Sun; Z. M. Huang; J. H. Chu

doi:10.1063/1.1775305

Optical and electrical properties of highly (100)-oriented PbZr _1-xTi_xO₃ thin films on the LaNiO₃ buffer layer

Jian Yu, X. J. Meng, J. L. Sun, Z. M. Huang, J. H. Chu

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The growth of highly oriented LaNiO₃ buffer layers on both both silicon and platinized was discussed wet chemical solution deposition processes. The misfit elastic strains were found to be important for the determination of orientation of PZT thin films. The infrared optical constant, ferroelectric and dielectric properties were characterized for the PZT thin films with x=0.5 and 0.6 on the LaNiO₃/platinized silicon substrate. Results show that the finite grain size effect plays a key role in determining the optical and electrical properties.

Original language	English
Pages (from-to)	2792-2799
Number of pages	8
Journal	Journal of Applied Physics
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.1775305
State	Published - 1 Sep 2004
Externally published	Yes

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abstract = "The growth of highly oriented LaNiO3 buffer layers on both both silicon and platinized was discussed wet chemical solution deposition processes. The misfit elastic strains were found to be important for the determination of orientation of PZT thin films. The infrared optical constant, ferroelectric and dielectric properties were characterized for the PZT thin films with x=0.5 and 0.6 on the LaNiO3/platinized silicon substrate. Results show that the finite grain size effect plays a key role in determining the optical and electrical properties.",

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AU - Yu, Jian

AU - Meng, X. J.

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AU - Huang, Z. M.

AU - Chu, J. H.

PY - 2004/9/1

Y1 - 2004/9/1

N2 - The growth of highly oriented LaNiO3 buffer layers on both both silicon and platinized was discussed wet chemical solution deposition processes. The misfit elastic strains were found to be important for the determination of orientation of PZT thin films. The infrared optical constant, ferroelectric and dielectric properties were characterized for the PZT thin films with x=0.5 and 0.6 on the LaNiO3/platinized silicon substrate. Results show that the finite grain size effect plays a key role in determining the optical and electrical properties.

AB - The growth of highly oriented LaNiO3 buffer layers on both both silicon and platinized was discussed wet chemical solution deposition processes. The misfit elastic strains were found to be important for the determination of orientation of PZT thin films. The infrared optical constant, ferroelectric and dielectric properties were characterized for the PZT thin films with x=0.5 and 0.6 on the LaNiO3/platinized silicon substrate. Results show that the finite grain size effect plays a key role in determining the optical and electrical properties.

UR - https://www.scopus.com/pages/publications/4944267420

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DO - 10.1063/1.1775305

M3 - 文章

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JO - Journal of Applied Physics

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ER -

Optical and electrical properties of highly (100)-oriented PbZr _1-xTi_xO₃ thin films on the LaNiO₃ buffer layer

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