On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate

  • Zhihao Zhang
  • , Zhiwei Fang*
  • , Junxia Zhou
  • , Youting Liang
  • , Yuan Zhou
  • , Zhe Wang
  • , Jian Liu
  • , Ting Huang
  • , Rui Bao
  • , Jianping Yu
  • , Haisu Zhang
  • , Min Wang
  • , Ya Cheng*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976 nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip.

Original languageEnglish
Article number865
JournalMicromachines
Volume13
Issue number6
DOIs
StatePublished - Jun 2022

Keywords

  • Yb-doped waveguide amplifier
  • internal net gain
  • lithium niobate
  • low propagation loss

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