On-Chip Integrated Waveguide Amplifiers on Erbium-Doped Thin-Film Lithium Niobate on Insulator

Junxia Zhou; Youting Liang; Zhaoxiang Liu; Wei Chu; Haisu Zhang; Difeng Yin; Zhiwei Fang; Rongbo Wu; Jianhao Zhang; Wei Chen; Zhe Wang; Yuan Zhou; Min Wang; Ya Cheng

doi:10.1002/lpor.202100030

On-Chip Integrated Waveguide Amplifiers on Erbium-Doped Thin-Film Lithium Niobate on Insulator

Junxia Zhou
, Youting Liang
, Zhaoxiang Liu
, Wei Chu
, Haisu Zhang
, Difeng Yin
, Zhiwei Fang^*
, Rongbo Wu
, Jianhao Zhang
, Wei Chen
, Zhe Wang
, Yuan Zhou
, Min Wang
, Ya Cheng^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

165 Scopus citations

Abstract

On-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography-assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm⁻¹. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

Original language	English
Article number	2100030
Journal	Laser and Photonics Reviews
Volume	15
Issue number	8
DOIs	https://doi.org/10.1002/lpor.202100030
State	Published - Aug 2021

Keywords

chemomechanical etching
erbium-doped waveguide amplifier
lithium niobate
photolithography
thin film

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10.1002/lpor.202100030

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title = "On-Chip Integrated Waveguide Amplifiers on Erbium-Doped Thin-Film Lithium Niobate on Insulator",

abstract = "On-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography-assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm−1. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.",

keywords = "chemomechanical etching, erbium-doped waveguide amplifier, lithium niobate, photolithography, thin film",

author = "Junxia Zhou and Youting Liang and Zhaoxiang Liu and Wei Chu and Haisu Zhang and Difeng Yin and Zhiwei Fang and Rongbo Wu and Jianhao Zhang and Wei Chen and Zhe Wang and Yuan Zhou and Min Wang and Ya Cheng",

note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = aug,

doi = "10.1002/lpor.202100030",

language = "英语",

volume = "15",

journal = "Laser and Photonics Reviews",

issn = "1863-8880",

publisher = "Wiley-VCH Verlag",

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TY - JOUR

T1 - On-Chip Integrated Waveguide Amplifiers on Erbium-Doped Thin-Film Lithium Niobate on Insulator

AU - Zhou, Junxia

AU - Liang, Youting

AU - Liu, Zhaoxiang

AU - Chu, Wei

AU - Zhang, Haisu

AU - Yin, Difeng

AU - Fang, Zhiwei

AU - Wu, Rongbo

AU - Zhang, Jianhao

AU - Chen, Wei

AU - Wang, Zhe

AU - Zhou, Yuan

AU - Wang, Min

AU - Cheng, Ya

PY - 2021/8

Y1 - 2021/8

N2 - On-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography-assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm−1. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

AB - On-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography-assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm−1. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

KW - chemomechanical etching

KW - erbium-doped waveguide amplifier

KW - lithium niobate

KW - photolithography

KW - thin film

UR - https://www.scopus.com/pages/publications/85108848586

U2 - 10.1002/lpor.202100030

DO - 10.1002/lpor.202100030

M3 - 文章

AN - SCOPUS:85108848586

SN - 1863-8880

VL - 15

JO - Laser and Photonics Reviews

JF - Laser and Photonics Reviews

IS - 8

M1 - 2100030

ER -

On-Chip Integrated Waveguide Amplifiers on Erbium-Doped Thin-Film Lithium Niobate on Insulator

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Keywords

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