Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

Zhao Guan; Tao Wang; Yunzhe Zheng; Yue Peng; Luqi Wei; Yuke Zhang; Abliz Mattursun; Jiahao Huang; Wen Yi Tong; Genquan Han; Binbin Chen; Ping Hua Xiang; Chun Gang Duan; Ni Zhong

doi:10.1088/1674-1056/ad362f

Observing ferroelastic switching in Hf_0.5Zr_0.5O₂ thin film

Zhao Guan^*
, Tao Wang
, Yunzhe Zheng
, Yue Peng
, Luqi Wei
, Yuke Zhang
, Abliz Mattursun
, Jiahao Huang
, Wen Yi Tong
, Genquan Han
, Binbin Chen
, Ping Hua Xiang
, Chun Gang Duan
, Ni Zhong^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor (CMOS) compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

Original language	English
Article number	067701
Journal	Chinese Physics B
Volume	33
Issue number	6
DOIs	https://doi.org/10.1088/1674-1056/ad362f
State	Published - 1 Jun 2024

Keywords

HfO-based ferroelectrics
ferroelasticity
piezoelectric force microscopy (PFM)

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10.1088/1674-1056/ad362f

Cite this

@article{cc7521cbb3de46d691a883a6eb75e209,

title = "Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film",

abstract = "Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor (CMOS) compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.",

keywords = "HfO-based ferroelectrics, ferroelasticity, piezoelectric force microscopy (PFM)",

author = "Zhao Guan and Tao Wang and Yunzhe Zheng and Yue Peng and Luqi Wei and Yuke Zhang and Abliz Mattursun and Jiahao Huang and Tong, \{Wen Yi\} and Genquan Han and Binbin Chen and Xiang, \{Ping Hua\} and Duan, \{Chun Gang\} and Ni Zhong",

note = "Publisher Copyright: {\textcopyright} 2024 Chinese Physical Society and IOP Publishing Ltd",

year = "2024",

month = jun,

day = "1",

doi = "10.1088/1674-1056/ad362f",

language = "英语",

volume = "33",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

AU - Guan, Zhao

AU - Wang, Tao

AU - Zheng, Yunzhe

AU - Peng, Yue

AU - Wei, Luqi

AU - Zhang, Yuke

AU - Mattursun, Abliz

AU - Huang, Jiahao

AU - Tong, Wen Yi

AU - Han, Genquan

AU - Chen, Binbin

AU - Xiang, Ping Hua

AU - Duan, Chun Gang

AU - Zhong, Ni

PY - 2024/6/1

Y1 - 2024/6/1

N2 - Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor (CMOS) compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

AB - Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor (CMOS) compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

KW - HfO-based ferroelectrics

KW - ferroelasticity

KW - piezoelectric force microscopy (PFM)

UR - https://www.scopus.com/pages/publications/85195601023

U2 - 10.1088/1674-1056/ad362f

DO - 10.1088/1674-1056/ad362f

M3 - 文章

AN - SCOPUS:85195601023

SN - 1674-1056

VL - 33

JO - Chinese Physics B

JF - Chinese Physics B

IS - 6

M1 - 067701

ER -

Observing ferroelastic switching in Hf_0.5Zr_0.5O₂ thin film

Abstract

Keywords

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