Observations on subband electron properties in In0.65Ga0.35As/ In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers

Wen Zheng Zhou; Tie Lin; Li Yan Shang; Zhi Ming Huang; Bo Zhu; Li Jie Cui; Hong Ling Gao; Dong Lin Li; Shao Ling Guo; Yong Sheng Gui; Jun Hao Chu

doi:10.7498/aps.56.4143

Observations on subband electron properties in In_0.65Ga_0.35As/ In_0.52Al_0.48As MM-HEMT with Si δ-doped on the barriers

Wen Zheng Zhou^*
, Tie Lin
, Li Yan Shang
, Zhi Ming Huang
, Bo Zhu
, Li Jie Cui
, Hong Ling Gao
, Dong Lin Li
, Shao Ling Guo
, Yong Sheng Gui
, Jun Hao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Magneto-transport measurements have been carried out on a Si δ-doped In_0.65Ga_0.35As/ In_0.52Al_0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas (SdH) effect and the Hall effect for the In_0.65Ga_0.35As/ In_0.52Al_0.48As As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrödinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.

Original language	English
Pages (from-to)	4143-4147
Number of pages	5
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	56
Issue number	7
DOIs	https://doi.org/10.7498/aps.56.4143
State	Published - Jul 2007

Keywords

FFT analysis
SdH oscillation
Self-consistently calculation
Two-dimensional electron gas

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@article{564e9d07418845028bf96d4e27fc5cb3,

title = "Observations on subband electron properties in In0.65Ga0.35As/ In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers",

abstract = "Magneto-transport measurements have been carried out on a Si δ-doped In0.65Ga0.35As/ In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas (SdH) effect and the Hall effect for the In0.65Ga0.35As/ In0.52Al0.48As As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schr{\"o}dinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.",

keywords = "FFT analysis, SdH oscillation, Self-consistently calculation, Two-dimensional electron gas",

author = "Zhou, \{Wen Zheng\} and Tie Lin and Shang, \{Li Yan\} and Huang, \{Zhi Ming\} and Bo Zhu and Cui, \{Li Jie\} and Gao, \{Hong Ling\} and Li, \{Dong Lin\} and Guo, \{Shao Ling\} and Gui, \{Yong Sheng\} and Chu, \{Jun Hao\}",

year = "2007",

month = jul,

doi = "10.7498/aps.56.4143",

language = "英语",

volume = "56",

pages = "4143--4147",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "7",

}

TY - JOUR

T1 - Observations on subband electron properties in In0.65Ga0.35As/ In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers

AU - Zhou, Wen Zheng

AU - Lin, Tie

AU - Shang, Li Yan

AU - Huang, Zhi Ming

AU - Zhu, Bo

AU - Cui, Li Jie

AU - Gao, Hong Ling

AU - Li, Dong Lin

AU - Guo, Shao Ling

AU - Gui, Yong Sheng

AU - Chu, Jun Hao

PY - 2007/7

Y1 - 2007/7

N2 - Magneto-transport measurements have been carried out on a Si δ-doped In0.65Ga0.35As/ In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas (SdH) effect and the Hall effect for the In0.65Ga0.35As/ In0.52Al0.48As As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrödinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.

AB - Magneto-transport measurements have been carried out on a Si δ-doped In0.65Ga0.35As/ In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas (SdH) effect and the Hall effect for the In0.65Ga0.35As/ In0.52Al0.48As As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrödinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.

KW - FFT analysis

KW - SdH oscillation

KW - Self-consistently calculation

KW - Two-dimensional electron gas

UR - https://www.scopus.com/pages/publications/34547614087

U2 - 10.7498/aps.56.4143

DO - 10.7498/aps.56.4143

M3 - 文章

AN - SCOPUS:34547614087

SN - 1000-3290

VL - 56

SP - 4143

EP - 4147

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 7

ER -

Observations on subband electron properties in In_0.65Ga_0.35As/ In_0.52Al_0.48As MM-HEMT with Si δ-doped on the barriers

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