Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1-xN/GaN heterostructures

K. Han; B. Shen; N. Tang; Y. Q. Tang; X. W. He; Z. X. Qin; Z. J. Yang; G. Y. Zhang; T. Lin; B. Zhu; W. Z. Zhou; J. H. Chu

doi:10.1016/j.physleta.2007.02.032

Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al_xGa_1-xN/GaN heterostructures

K. Han
, B. Shen^*
, N. Tang
, Y. Q. Tang
, X. W. He
, Z. X. Qin
, Z. J. Yang
, G. Y. Zhang
, T. Lin
, B. Zhu
, W. Z. Zhou
, J. H. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in Al_xGa_1-xN/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in Al_xGa_1-xN/GaN heterostructures, is much higher than the theoretical prediction.

Original language	English
Pages (from-to)	267-270
Number of pages	4
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	366
Issue number	3
DOIs	https://doi.org/10.1016/j.physleta.2007.02.032
State	Published - 25 Jun 2007
Externally published	Yes

Keywords

2DEG
AlGaN/GaN heterostructure
Electron-electron interaction
Magnetoresistivity

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10.1016/j.physleta.2007.02.032

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Han, K., Shen, B., Tang, N., Tang, Y. Q., He, X. W., Qin, Z. X., Yang, Z. J., Zhang, G. Y., Lin, T., Zhu, B., Zhou, W. Z., & Chu, J. H. (2007). Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al_xGa_1-xN/GaN heterostructures. Physics Letters, Section A: General, Atomic and Solid State Physics, 366(3), 267-270. https://doi.org/10.1016/j.physleta.2007.02.032

@article{9c540fbeef184b2394fdccfe38b3b829,

title = "Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1-xN/GaN heterostructures",

abstract = "Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in AlxGa1-xN/GaN heterostructures, is much higher than the theoretical prediction.",

keywords = "2DEG, AlGaN/GaN heterostructure, Electron-electron interaction, Magnetoresistivity",

author = "K. Han and B. Shen and N. Tang and Tang, \{Y. Q.\} and He, \{X. W.\} and Qin, \{Z. X.\} and Yang, \{Z. J.\} and Zhang, \{G. Y.\} and T. Lin and B. Zhu and Zhou, \{W. Z.\} and Chu, \{J. H.\}",

year = "2007",

month = jun,

day = "25",

doi = "10.1016/j.physleta.2007.02.032",

language = "英语",

volume = "366",

pages = "267--270",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier B.V.",

number = "3",

}

Han, K, Shen, B, Tang, N, Tang, YQ, He, XW, Qin, ZX, Yang, ZJ, Zhang, GY, Lin, T, Zhu, B, Zhou, WZ & Chu, JH 2007, 'Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al_xGa_1-xN/GaN heterostructures', Physics Letters, Section A: General, Atomic and Solid State Physics, vol. 366, no. 3, pp. 267-270. https://doi.org/10.1016/j.physleta.2007.02.032

TY - JOUR

T1 - Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1-xN/GaN heterostructures

AU - Han, K.

AU - Shen, B.

AU - Tang, N.

AU - Tang, Y. Q.

AU - He, X. W.

AU - Qin, Z. X.

AU - Yang, Z. J.

AU - Zhang, G. Y.

AU - Lin, T.

AU - Zhu, B.

AU - Zhou, W. Z.

AU - Chu, J. H.

PY - 2007/6/25

Y1 - 2007/6/25

N2 - Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in AlxGa1-xN/GaN heterostructures, is much higher than the theoretical prediction.

AB - Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in AlxGa1-xN/GaN heterostructures, is much higher than the theoretical prediction.

KW - 2DEG

KW - AlGaN/GaN heterostructure

KW - Electron-electron interaction

KW - Magnetoresistivity

UR - https://www.scopus.com/pages/publications/34248340068

U2 - 10.1016/j.physleta.2007.02.032

DO - 10.1016/j.physleta.2007.02.032

M3 - 文章

AN - SCOPUS:34248340068

SN - 0375-9601

VL - 366

SP - 267

EP - 270

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 3

ER -

Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al_xGa_1-xN/GaN heterostructures

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