Numerical simulation of probe induced surface plasmon resonance coupling nanolithography

A new nanolithographic technology, the probe induced surface plasmon resonance coupling nanolithography (PSPRN), is presented and analyzed numerically by using finite difference time domain method for the loss and dispersive materials. The PSPRN uses a fundamental mode Gaussian beam with wavelength of 514.5 nm to excite the Kretschmann surface plasmon resonance, and utilizes the metal probe local-field enhancement effect to realize nanolithography. The influences of different distances between probe and recording layer and different sizes of tip on local field enhancement and the distribution of electric field intensity amplitude on the surface of recording layer were investigated. Results show that the local field enhancement effect is most significant and the electric field intensity amplitude contrast ratio is maximal when the probe is in contact with the recording layer. When the distance between tip and recording layer is 5 nm, the distribution width of the relative electric field intensity amplitude above the critical value for near-field nanolithography on the surface of recording layer is close to the size of the tip.