Abstract
Recently, incorporation of band-gap graded structure into CdTe absorption layer has been proposed for CdTe based solar cells. In the present work, we numerically investigate the effects of band-gap gradation on photovoltaic characteristics for CdS/CdZnTe band-gap back graded solar cells. Dependences of short circuit current density, open circuit voltage, and conversion efficiency on the grading strength are obtained and analyzed. Moreover, impacts of minority carrier diffusion length of band-gap graded CdZnTe layer on the grading benefits for CdS/CdZnTe back graded solar cells are discussed in detail.
| Original language | English |
|---|---|
| Pages (from-to) | 280-283 |
| Number of pages | 4 |
| Journal | Optoelectronics and Advanced Materials, Rapid Communications |
| Volume | 6 |
| Issue number | 1-2 |
| State | Published - 2012 |
| Externally published | Yes |
Keywords
- CdS/CdZnTe thin film solar cell
- Graded band gap
- Minority carrier diffusion length
- Photovoltaic characteristics
- SCAPS
