Nucleation and growth processes during molecular-beam epitaxy of ternary compounds

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Abstract

In this letter the effect of the different migration rates of two kinds of cations on the nucleation and growth processes during molecular-beam epitaxy of ternary systems was studied in detail by Monte Carlo simulation. In AlGaAs ternary system, in which the migration rate of cation Ga is larger than that of Al, there are three types of nucleation: Ga-Ga, Al-Ga and Al-Al, which show different characteristics in the growth processes.

Original languageEnglish
Pages (from-to)855-858
Number of pages4
JournalChinese Physics Letters
Volume13
Issue number11
DOIs
StatePublished - 1996
Externally publishedYes

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