Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

H. B. Mao; W. Lu; S. C. Shen

doi:10.1016/0022-0248(95)00026-7

Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

H. B. Mao^*
, W. Lu
, S. C. Shen

^*Corresponding author for this work

Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.

Original language	English
Pages (from-to)	31-37
Number of pages	7
Journal	Journal of Crystal Growth
Volume	151
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(95)00026-7
State	Published - 2 May 1995
Externally published	Yes

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title = "Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)",

abstract = "The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.",

author = "Mao, \{H. B.\} and W. Lu and Shen, \{S. C.\}",

year = "1995",

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T1 - Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

AU - Mao, H. B.

AU - Lu, W.

AU - Shen, S. C.

PY - 1995/5/2

Y1 - 1995/5/2

N2 - The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.

AB - The nucleation and growth processes of GaAs molecular-beam epitaxy were studied by Monte Carlo simulation. The migration of Ga adatoms on the 2 × 4 GaAs (001) surface is anisotropic which has a great effect on the growth kinetics of GaAs. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures at first. The island size distribution at low coverage was also studied. Finally, the correlation function between atoms was studied which directly shows the great anisotropy of the growth process. The correlation function shows that the Ga adatoms are depleted around islands.

UR - https://www.scopus.com/pages/publications/0029632884

U2 - 10.1016/0022-0248(95)00026-7

DO - 10.1016/0022-0248(95)00026-7

M3 - 文章

AN - SCOPUS:0029632884

SN - 0022-0248

VL - 151

SP - 31

EP - 37

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Nucleation and growth processes during molecular-beam epitaxy of GaAs(001)

Abstract

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