Novel Triple-Gate Nanosheet RFET With Embedded SiGe Surrounding Channel for Enhanced On-State Current

In this study, a novel triple-gate nanosheet reconfigurable field-effect transistor (RFET) featuring an embedded SiGe layer conformally surrounding the silicon channel (ESCRFET) beneath the control gate (CG) was proposed. The bandgap offset between SiGe and Si is utilized to modulate the energy band profile and optimize carrier injection in both n- and p-type operation modes. Compared to the traditional triple-gate RFET (TG-RFET), the proposed ESCRFET achieves 50.2% and 82.2% enhancement in Ion for n- and p-type devices, respectively, while maintaining comparable subthreshold swing characteristics. A neural-network-based compact model is developed to accurately reproduce the electrical characteristics, with an average error of less than 3%, enabling efficient SPICE-level circuit simulation. Circuit-level simulations of nor, AOI, and 1-bit full-adder circuits demonstrate that ESCRFET significantly reduces propagation delay, achieving a 40%–60% faster response compared with the TG-RFET, while also lowering the total transistor count from 28 to 18, corresponding to a 36% reduction. These results confirm the superior electrical performance and scalability of the ESCRFET for future reconfigurable logic and arithmetic circuit applications.