Novel tri-independent-gate FinFET for multi-current modes control

Chengsheng Liu; Fanglin Zheng; Yabin Sun; Xiaojin Li; Yanling Shi

doi:10.1016/j.spmi.2017.05.025

Novel tri-independent-gate FinFET for multi-current modes control

Chengsheng Liu
, Fanglin Zheng
, Yabin Sun
, Xiaojin Li^*
, Yanling Shi

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this paper, a novel tri-independent-gate (TIG) FinFET is presented for multi-current modes control for the first time. The entire integration flow of proposed TIG FinFET is fully compatible with the mainstream gate-first HKMG FinFET process. Five kinds of ON state modes and threshold voltages can be offered by TIG FinFET without additional voltage sources, and it is demonstrated to have a great potential in dynamic voltage SRAM design. The critical electrical parameters of TIG FinFET in different modes are fully investigated with TCAD simulation and compared to the traditional FinFET. TIG FinFET with double fins is found to possess a distinct different output and capacitance characteristics with single fin FinFET. The underlying physical mechanisms are analyzed and investigated in detail.

Original language	English
Pages (from-to)	374-381
Number of pages	8
Journal	Superlattices and Microstructures
Volume	109
DOIs	https://doi.org/10.1016/j.spmi.2017.05.025
State	Published - Sep 2017

Keywords

FinFET
TCAD
Threshold voltage
Tri-independent-gate

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10.1016/j.spmi.2017.05.025

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title = "Novel tri-independent-gate FinFET for multi-current modes control",

abstract = "In this paper, a novel tri-independent-gate (TIG) FinFET is presented for multi-current modes control for the first time. The entire integration flow of proposed TIG FinFET is fully compatible with the mainstream gate-first HKMG FinFET process. Five kinds of ON state modes and threshold voltages can be offered by TIG FinFET without additional voltage sources, and it is demonstrated to have a great potential in dynamic voltage SRAM design. The critical electrical parameters of TIG FinFET in different modes are fully investigated with TCAD simulation and compared to the traditional FinFET. TIG FinFET with double fins is found to possess a distinct different output and capacitance characteristics with single fin FinFET. The underlying physical mechanisms are analyzed and investigated in detail.",

keywords = "FinFET, TCAD, Threshold voltage, Tri-independent-gate",

author = "Chengsheng Liu and Fanglin Zheng and Yabin Sun and Xiaojin Li and Yanling Shi",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = sep,

doi = "10.1016/j.spmi.2017.05.025",

language = "英语",

volume = "109",

pages = "374--381",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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}

TY - JOUR

T1 - Novel tri-independent-gate FinFET for multi-current modes control

AU - Liu, Chengsheng

AU - Zheng, Fanglin

AU - Sun, Yabin

AU - Li, Xiaojin

AU - Shi, Yanling

PY - 2017/9

Y1 - 2017/9

N2 - In this paper, a novel tri-independent-gate (TIG) FinFET is presented for multi-current modes control for the first time. The entire integration flow of proposed TIG FinFET is fully compatible with the mainstream gate-first HKMG FinFET process. Five kinds of ON state modes and threshold voltages can be offered by TIG FinFET without additional voltage sources, and it is demonstrated to have a great potential in dynamic voltage SRAM design. The critical electrical parameters of TIG FinFET in different modes are fully investigated with TCAD simulation and compared to the traditional FinFET. TIG FinFET with double fins is found to possess a distinct different output and capacitance characteristics with single fin FinFET. The underlying physical mechanisms are analyzed and investigated in detail.

AB - In this paper, a novel tri-independent-gate (TIG) FinFET is presented for multi-current modes control for the first time. The entire integration flow of proposed TIG FinFET is fully compatible with the mainstream gate-first HKMG FinFET process. Five kinds of ON state modes and threshold voltages can be offered by TIG FinFET without additional voltage sources, and it is demonstrated to have a great potential in dynamic voltage SRAM design. The critical electrical parameters of TIG FinFET in different modes are fully investigated with TCAD simulation and compared to the traditional FinFET. TIG FinFET with double fins is found to possess a distinct different output and capacitance characteristics with single fin FinFET. The underlying physical mechanisms are analyzed and investigated in detail.

KW - FinFET

KW - TCAD

KW - Threshold voltage

KW - Tri-independent-gate

UR - https://www.scopus.com/pages/publications/85019489600

U2 - 10.1016/j.spmi.2017.05.025

DO - 10.1016/j.spmi.2017.05.025

M3 - 文章

AN - SCOPUS:85019489600

SN - 0749-6036

VL - 109

SP - 374

EP - 381

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Novel tri-independent-gate FinFET for multi-current modes control

Abstract

Keywords

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