Novel thermoelectric materials based on boron-doped silicon microchannel plates

Pengliang Ci; Jing Shi; Fei Wang; Shaohui Xu; Zhenya Yang; Pingxiong Yang; Lianwei Wang; Paul K. Chu

doi:10.1016/j.matlet.2011.03.022

Novel thermoelectric materials based on boron-doped silicon microchannel plates

Pengliang Ci, Jing Shi, Fei Wang, Shaohui Xu, Zhenya Yang, Pingxiong Yang, Lianwei Wang, Paul K. Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The thermoelectric properties of boron-doped silicon microchannel plates (MCPs) were investigated. The samples were prepared by photo-assisted electrochemical etching (PAECE). The Seebeck coefficient and electrical resistivity at room temperature (25 °C) were measured to determine the thermoelectric properties of the samples. In order to decrease the very high resistivity, boron doping was introduced and by modulating the doping time, a series of samples with different resistivity as well as Seebeck coefficient were obtained. Boron doping changed the electrical resistivity of the samples from 1.5 × 10⁵ Ω cm to 5.8 × 10^-3 Ω cm, and the absolute Seebeck coefficient deteriorated relatively slightly from 674 μV/K to 159 μV/K. According to the Seebeck coefficient and electrical conductivity, the power factor was calculated and a peak value of 4.7 × 10^-1 mW m^-1 K^-2 was obtained. The results indicate that silicon MCPs doped with boron are promising silicon-based thermoelectric materials.

Original language	English
Pages (from-to)	1618-1620
Number of pages	3
Journal	Materials Letters
Volume	65
Issue number	11
DOIs	https://doi.org/10.1016/j.matlet.2011.03.022
State	Published - 15 Jun 2011

Keywords

Boron doping
Electrical properties
Porous materials
Thermoelectric materials

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10.1016/j.matlet.2011.03.022

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title = "Novel thermoelectric materials based on boron-doped silicon microchannel plates",

abstract = "The thermoelectric properties of boron-doped silicon microchannel plates (MCPs) were investigated. The samples were prepared by photo-assisted electrochemical etching (PAECE). The Seebeck coefficient and electrical resistivity at room temperature (25 °C) were measured to determine the thermoelectric properties of the samples. In order to decrease the very high resistivity, boron doping was introduced and by modulating the doping time, a series of samples with different resistivity as well as Seebeck coefficient were obtained. Boron doping changed the electrical resistivity of the samples from 1.5 × 105 Ω cm to 5.8 × 10-3 Ω cm, and the absolute Seebeck coefficient deteriorated relatively slightly from 674 μV/K to 159 μV/K. According to the Seebeck coefficient and electrical conductivity, the power factor was calculated and a peak value of 4.7 × 10-1 mW m-1 K-2 was obtained. The results indicate that silicon MCPs doped with boron are promising silicon-based thermoelectric materials.",

keywords = "Boron doping, Electrical properties, Porous materials, Thermoelectric materials",

author = "Pengliang Ci and Jing Shi and Fei Wang and Shaohui Xu and Zhenya Yang and Pingxiong Yang and Lianwei Wang and Chu, \{Paul K.\}",

year = "2011",

month = jun,

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doi = "10.1016/j.matlet.2011.03.022",

language = "英语",

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TY - JOUR

T1 - Novel thermoelectric materials based on boron-doped silicon microchannel plates

AU - Ci, Pengliang

AU - Shi, Jing

AU - Wang, Fei

AU - Xu, Shaohui

AU - Yang, Zhenya

AU - Yang, Pingxiong

AU - Wang, Lianwei

AU - Chu, Paul K.

PY - 2011/6/15

Y1 - 2011/6/15

N2 - The thermoelectric properties of boron-doped silicon microchannel plates (MCPs) were investigated. The samples were prepared by photo-assisted electrochemical etching (PAECE). The Seebeck coefficient and electrical resistivity at room temperature (25 °C) were measured to determine the thermoelectric properties of the samples. In order to decrease the very high resistivity, boron doping was introduced and by modulating the doping time, a series of samples with different resistivity as well as Seebeck coefficient were obtained. Boron doping changed the electrical resistivity of the samples from 1.5 × 105 Ω cm to 5.8 × 10-3 Ω cm, and the absolute Seebeck coefficient deteriorated relatively slightly from 674 μV/K to 159 μV/K. According to the Seebeck coefficient and electrical conductivity, the power factor was calculated and a peak value of 4.7 × 10-1 mW m-1 K-2 was obtained. The results indicate that silicon MCPs doped with boron are promising silicon-based thermoelectric materials.

AB - The thermoelectric properties of boron-doped silicon microchannel plates (MCPs) were investigated. The samples were prepared by photo-assisted electrochemical etching (PAECE). The Seebeck coefficient and electrical resistivity at room temperature (25 °C) were measured to determine the thermoelectric properties of the samples. In order to decrease the very high resistivity, boron doping was introduced and by modulating the doping time, a series of samples with different resistivity as well as Seebeck coefficient were obtained. Boron doping changed the electrical resistivity of the samples from 1.5 × 105 Ω cm to 5.8 × 10-3 Ω cm, and the absolute Seebeck coefficient deteriorated relatively slightly from 674 μV/K to 159 μV/K. According to the Seebeck coefficient and electrical conductivity, the power factor was calculated and a peak value of 4.7 × 10-1 mW m-1 K-2 was obtained. The results indicate that silicon MCPs doped with boron are promising silicon-based thermoelectric materials.

KW - Boron doping

KW - Electrical properties

KW - Porous materials

KW - Thermoelectric materials

UR - https://www.scopus.com/pages/publications/79953200195

U2 - 10.1016/j.matlet.2011.03.022

DO - 10.1016/j.matlet.2011.03.022

M3 - 文章

AN - SCOPUS:79953200195

SN - 0167-577X

VL - 65

SP - 1618

EP - 1620

JO - Materials Letters

JF - Materials Letters

IS - 11

ER -

Novel thermoelectric materials based on boron-doped silicon microchannel plates

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Keywords

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