Abstract
A white-emitting novel Al1−xSix Cx N1−x: Mn2+ carbidonitride phosphor was synthesized by introducing SiC into AlN: Mn2+at the temperature as low as 1500 °C. The influence of Mn2+ and SiC doping concentration on the structure, morphology and luminescent properties was systematically investigated by XRD, EDS, solid state NMR, FESEM, and PL. The relatively low calcination temperature endows AlN: Mn2+ with different luminescent properties. Under 254 nm UV excitation, it not only exhibits a characteristic red emission from Mn2+ but also covers a broad violet-blue-green emission from defects. The CIE coordinates (0.2999, 0.2510) precisely locate in the white region. With the introduction of SiC, an increasing of the red emission from Mn2+ is observed, while no variation occurs for the defect emission. The maximum red luminescence is attained for the composition of x = 0.05 that has an improved thermal stability by 20%. Finally, a low-voltage FED device was fabricated by using Al0.95Si0.05C0.05N0.95: 0.7% Mn2+ carbidonitride phosphor. Under low-voltage excitation, it exhibits a high brightness, low saturation, and good color stability, which makes Al1−xSixCxN1−x: Mn2+ carbidonitride phosphor have a great potential for full color FEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 8405-8413 |
| Number of pages | 9 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 28 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1 Jun 2017 |
| Externally published | Yes |
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