Novel silicon-on-insulator grating couplers based on CMOS poly-silicon gate layer

  • Chao Qiu*
  • , Zhen Sheng
  • , Le Li
  • , Albert Pang
  • , Aiming Wu
  • , Junjie Du
  • , Jing Chen
  • , Xi Wang
  • , Fuwan Gan
  • , Shichang Zou
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Grating couplers are widely investigated as a coupling interface between silicon-on-insulator waveguides and optical fibers. In this work, novel grating couplers based on strip poly-Si are proposed. This structure utilizes the poly-Si gate layer of the CMOS MOSFETs, and thus enables grating couplers integrated with CMOS circuits without adding any additional masks and process steps. Simulation results show that a coupling efficiency over 60% can be achieved between silicon-on-insulator waveguides and fibers.

Original languageEnglish
Title of host publication2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011
StatePublished - 2011
Externally publishedYes
Event2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011 - Shanghai, China
Duration: 13 Nov 201116 Nov 2011

Publication series

Name2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011

Conference

Conference2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011
Country/TerritoryChina
CityShanghai
Period13/11/1116/11/11

Keywords

  • grating coupler
  • silicon-on-insulator (SOI)
  • waveguides

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