Novel silicon-on-insulator grating couplers based on CMOS poly-silicon gate layer

  • Chao Qiu*
  • , Zhen Sheng
  • , Le Li
  • , Albert Pang
  • , Aiming Wu
  • , Junjie Du
  • , Jing Chen
  • , Xi Wang
  • , Fuwan Gan
  • , Shichang Zou
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Grating couplers are widely investigated as a coupling interface between silicon-on-insulator waveguides and optical fibers. In this work, novel grating couplers based on strip poly-Si are proposed. This structure utilizes the poly-Si gate layer of the CMOS MOSFETs, and thus enables grating couplers integrated with CMOS circuits without adding any additional masks and process steps. Simulation results show that a coupling efficiency over 60% can be achieved between silicon-on-insulator waveguides and fibers.

Original languageEnglish
Title of host publicationOptoelectronic Materials and Devices VI
DOIs
StatePublished - 2011
Externally publishedYes
EventOptoelectronic Materials and Devices VI - Shanghai, China
Duration: 13 Nov 201116 Nov 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8308
ISSN (Print)0277-786X

Conference

ConferenceOptoelectronic Materials and Devices VI
Country/TerritoryChina
CityShanghai
Period13/11/1116/11/11

Keywords

  • Grating coupler
  • Silicon-on-insulator (SOI)
  • Waveguides

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